Zobrazeno 1 - 10
of 12
pro vyhledávání: '"K. V. Guinn"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1970-1976
Using x‐ray photoelectron spectroscopy (XPS) and real‐time, laser‐induced thermal desorption–laser‐induced fluorescence (LD–LIF), we have determined the coverage of Br and Cl on Si(100) surfaces that are etched in mixed HBr/Cl2 plasmas. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3756f42499b13b2a4820e34274002b5
https://doi.org/10.1116/1.579638
https://doi.org/10.1116/1.579638
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2630-2640
We have used laser‐induced thermal desorption, combined with laser‐induced fluorescence of SiCl(g) to study, in real time, the Si‐chloride (SiClx(ads)) layer that is present on the surface during Si etching in a high‐plasma density, low press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c15b2a4ed05815e8e2b29d128a8653
https://doi.org/10.1116/1.579082
https://doi.org/10.1116/1.579082
Autor:
K. V. Guinn, V. M. Donnelly
Publikováno v:
Journal of Applied Physics. 75:2227-2234
The chemical constituents present on the surface of small poly‐Si features that were etched in a chlorine plasma were determined. Poly‐Si films on SiO2‐covered Si(100) substrates were masked with photoresist stripes and then etched downstream f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a256c99a5dfddca4be51fd54df595f73
https://doi.org/10.1063/1.356285
https://doi.org/10.1063/1.356285
Publikováno v:
Scopus-Elsevier
Copper is a potential replacement for aluminum in future ultra large scale integrated (ULSI) circuits, due to its lower resistivity and better resistance to electromigration. Metal-organic chemical vapor deposition (MOCVD) of Cu offers advantages of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c031efe282208e0e4ce7b3110bc7a2e8
https://doi.org/10.1016/0039-6028(93)90198-s
https://doi.org/10.1016/0039-6028(93)90198-s
Autor:
A. Kornblit, J. T. C. Lee, M. Cheng, D. Monroe, Sheila Vaidya, Raymond A. Cirelli, S.V. Moccio, K.J. O'Connor, S. Saito, G.P. Schwartz, G. R. Weber, H. Ito, D.E. Ibbotson, Conor S. Rafferty, Martin L. Green, M.R. Pinto, Dale C. Jacobson, Kwok K. Ng, K. Kasama, S.A. Eshraghi, T. Itani, K. V. Guinn, Joze Bevk, T. Horiuchi, Leonard C. Feldman, M. Nakamae, K.S. Krisch, Rodney C. Kistler, Y. O. Kim, William M. Mansfield, E. Ikawa, T. Tounai, D. Brasen, S.C. McNevin, C. A. King, Steven James Hillenius, H. Miyamoto, Akihiko Ishitani, D.M. Boulin, M.L. O'Malley, E. Hasagawa, F.P. Klemens, L. Manchanda
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
A 0.25 /spl mu/m coded feature CMOS technology has been developed for high-performance, low-power ASIC applications. Critical process features include 248 nm DUV lithography on all levels, profiled twin tubs by high energy implantation (HEI), dual Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df7830f3e286f2a93189abf6ef9c60e4
https://doi.org/10.1109/vlsit.1995.520860
https://doi.org/10.1109/vlsit.1995.520860
Publikováno v:
Physical review letters. 72(17)
We report a new technique for detecting adsorbates in real time during plasma processing. During etching of Si(100) in a ${\mathrm{Cl}}_{2}$ plasma, pulsed XeCl excimer laser irradiation of the surface induces thermal desorption of ${\mathrm{SiCl}}_{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ef5dc9d2f45c46fe8fb50f5425c5ab7
https://pubmed.ncbi.nlm.nih.gov/10055980
https://pubmed.ncbi.nlm.nih.gov/10055980
Publikováno v:
MRS Proceedings. 334
This paper describes x-ray photoelectron spectroscopy (XPS) studies of etching of Si in high-density Cl2 plasmas. Polycrystalline Si films, masked with photoresist stripes, are etched and then transferred in vacuum to the XPS analysis chamber. Shadow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a553223aa10981a4f5bf7b1b1e58e68
https://doi.org/10.1557/proc-334-425
https://doi.org/10.1557/proc-334-425
Publikováno v:
MRS Proceedings. 282
We have studied the thermal decomposition of a Cu MOCVD precursor, hexafluoroacetylacetonate copper vinyl trim ethylsilane (CuI (hfac)(vtms)), on both air-oxidized and N2 ion beam sputter-annealed single crystal (100) and polycrystalline TiN surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::496ab8b1786587a32b47a2b68065e614
https://doi.org/10.1557/proc-282-379
https://doi.org/10.1557/proc-282-379
Autor:
K. V. Guinn, J. A. Mucha
Publikováno v:
MRS Proceedings. 282
The kinetics of deposition of SiO2 by the reaction of tetramethylsilane (TMS) with ozone (O3) has been studied over the temperature range 180 – 380° C and compared with available data for the same process using tetraethoxysilane (TEOS). Both proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb1eb86548b1210f54fc4e3ed485622
https://doi.org/10.1557/proc-282-575
https://doi.org/10.1557/proc-282-575
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:214
In order to achieve the critical dimension control and selectivity requirements of submicron etching, industrial oxide etching tools are utilizing low pressure, high density plasma etching processes. At low pressures, the mean free path (1 cm at 5 mT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd5015a17d5d86c1767767586c75a03
https://doi.org/10.1116/1.589267
https://doi.org/10.1116/1.589267