Zobrazeno 1 - 10
of 11
pro vyhledávání: '"K. V. Emtsev"'
Autor:
D. A. Andronikov, I. E. Panaiotti, G. G. Shelopin, A. S. Titov, E. I. Terukov, K. V. Emtsev, A. S. Abramov
Publikováno v:
Semiconductors. 52:931-933
The operating characteristics of heterojunction solar cells based on single-crystal silicon wafers with a reduced thickness are investigated experimentally. It is found that a decrease in the wafer thickness by 40% as compared to the standard values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47cc1d182b8c21cd2d9668b5a7529a6
https://doi.org/10.1134/s1063782618070230
https://doi.org/10.1134/s1063782618070230
Autor:
A. S. Abramov, S. A. Yakovlev, Alexei V. Kukin, A. V. Semenov, A. S. Titov, K. V. Emtsev, E. E. Terukova, D. A. Andronikov
Publikováno v:
Semiconductors. 50:1074-1078
The photoinduced degradation of photovoltaic converters based on an a-Si:H/µc-Si:H tandem structure under a standard illuminance of 1000 W/m2 is studied. The spectral and current–voltage characteristics of specially fabricated samples with various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48c95f2ca0eb9382eb69e6026acff86c
https://doi.org/10.1134/s1063782616080030
https://doi.org/10.1134/s1063782616080030
Autor:
A. V. Bobyl, K. V. Emtsev, Igor Sokolovskyi, E. I. Terukov, A. V. Sachenko, V. N. Verbitskiy, S. A. Kudryashov, Yu. V. Kryuchenko, A. S. Abramov, Vitaliy Kostylyov
Publikováno v:
Semiconductors. 49:693-699
Based on the general relations obtained in our previous studies, the photovoltaic characteristics of a model a-Si:H/μc-Si:H tandem solar cell (SC) are calculated and analyzed. The experimental and theoretical current-voltage (I–V) characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d8bdd713e750d97216e434fe3b15292
https://doi.org/10.1134/s1063782615050103
https://doi.org/10.1134/s1063782615050103
Autor:
I. A. Nyapshaev, D. A. Ryndin, K. V. Emtsev, V. I. Levchenkova, E. I. Terukov, S. N. Abolmasov, V. P. Kim, A. A. Bazeley, G. A. Ivanov, Sergey V. Tkachev, D. Yu. Kornilov, S. P. Gubin, A. S. Abramov
Publikováno v:
Technical Physics Letters. 43:78-80
Results on the creation of a current-collecting grid for heterojunction silicon solar cells by ink-jet printing are presented. Characteristics of the obtained solar cells are compared with those of the samples obtained using standard screen printing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ba34535eab832d96ed9e2fe0f87473
https://doi.org/10.1134/s1063785017010023
https://doi.org/10.1134/s1063785017010023
Autor:
Nikita B. Strokan, V. N. Lomasov, Gagik A. Oganesyan, A. A. Lebedev, V. V. Kozlovskiĭ, Valentin V. Emtsev, Alexander M. Ivanov, K. V. Emtsev
Publikováno v:
Semiconductors. 42:242-247
Comparative study of the effect of successive (up to fluences of 3 × 1016 cm−2) irradiation with 900 keV electrons of samples made of FZ-Si and 4H-SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a19de23fbfa5f92501433251bc31ecac
https://doi.org/10.1134/s1063782608020231
https://doi.org/10.1134/s1063782608020231
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:711-714
Production processes of electrically active defects in degenerate silicon subjected to 2.5 MeV electron irradiation at T = 4.2 K and T = 300 K have been studied. The production rates of primary and secondary defects in irradiated samples are analyzed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fa70fa2017255c10588e254cb2e2fe6
https://doi.org/10.1007/s10854-006-9103-6
https://doi.org/10.1007/s10854-006-9103-6
Publikováno v:
Physica B: Condensed Matter. :173-176
Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n ⩾ 3 × 10 18 cm - 3 are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b724e28b5e1fbf86f78e5bc5b6292e52
https://doi.org/10.1016/j.physb.2005.12.046
https://doi.org/10.1016/j.physb.2005.12.046
Autor:
V. Yu. Davydov, Gagik A. Oganesyan, Eugene E. Haller, K. V. Emtsev, D.S. Poloskin, V. V. Kozlovskii, Valentin V. Emtsev
Publikováno v:
physica status solidi (c). :601-604
Production processes of electrically active defects in nominally undoped n-GaN irradiated with fast electrons are investigated. It has been demonstrated that the silicon impurity atoms with shallow donor states at EC – 20 meV interact with native d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7004fa164ea8012330e81debafa9b73b
https://doi.org/10.1002/pssc.200306191
https://doi.org/10.1002/pssc.200306191
Autor:
S. A. Yakovlev, K. V. Emtsev, A F Semenov, A. S. Titov, A. S. Abramov, D. A. Andronikov, E. E. Terukova
Publikováno v:
Journal of Physics: Conference Series. 769:012038
Photo-induced degradation of tandem α-Si: H/μc-Si: H photoconverters under standard light flux densities of 1000 W/m2 (AM1.5G) have been investigated. Spectral and current-voltage characteristics of solar modules produced with standard and modified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9cff864dc89ee0aed3cf1e74da0392b
https://doi.org/10.1088/1742-6596/769/1/012038
https://doi.org/10.1088/1742-6596/769/1/012038
Autor:
Vladimir P. Markevich, I. D. Hawkins, V. V. Litvinov, Anthony R. Peaker, L. Dobaczewski, Valentin V. Emtsev, K. V. Emtsev, L.I. Murin
Publikováno v:
Physical Review B. 70
The electronic properties and thermal stability of centers incorporating a vacancy and a group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. The vacancy-group-V-impurity atom pairs ($E$ centers) have been induced by irradi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f09eca1297568f14575f88ae47228ff
https://doi.org/10.1103/physrevb.70.235213
https://doi.org/10.1103/physrevb.70.235213