Zobrazeno 1 - 10
of 16
pro vyhledávání: '"K. Tucto"'
Autor:
J. Dulanto, Miroslaw Batentschuk, Roland Weingärtner, K. Tucto, J. A. Guerra, Rolf Grieseler, Andres Osvet, L. Flores, J A Töfflinger
Publikováno v:
MRS Advances. 2:2989-2995
Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a688adf275b57923a80fb6219771d2
https://doi.org/10.1557/adv.2017.478
https://doi.org/10.1557/adv.2017.478
Autor:
F. De Zela, L Montañez, J A Töfflinger, J. A. Guerra, Roland Weingärtner, A. Winnaker, K. Tucto
Publikováno v:
MRS Advances. 1:2689-2694
The luminescence of Tb-doped a -SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb 3+ and the inhibition of hos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422b08b10822a95a222855464c70c744
https://doi.org/10.1557/adv.2016.464
https://doi.org/10.1557/adv.2016.464
Autor:
A. Winnaker, Roland Weingärtner, L Montañez, J. A. Guerra, J A Töfflinger, K. Tucto, J R Angulo
Publikováno v:
MRS Advances. 1:2929-2934
A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86c26172731666891be3489df999cbb
https://doi.org/10.1557/adv.2016.422
https://doi.org/10.1557/adv.2016.422
Combinatorial approach toward optimization of the light emission intensity of AlOxNy:Yb3+ thin films
Publikováno v:
Applied Optics. 58:3097
To obtain an adequate luminescent emission, a significant effort must be made to find a suitable host material. An interesting and highly efficient method is a combinatorial approach, which allows high velocity screening of a wider range of propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d130fa9875493872e10b2da8ab7007a7
https://doi.org/10.1364/ao.58.003097
https://doi.org/10.1364/ao.58.003097
Autor:
F. De Zela, L Montañez, K. Tucto, J. A. Guerra, Albrecht Winnacker, Roland Weingärtner, J A Töfflinger
Publikováno v:
Journal of Physics D: Applied Physics. 49:409601
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd227515392aa809471c2e9b73f6b9d
https://doi.org/10.1088/0022-3727/49/40/409601
https://doi.org/10.1088/0022-3727/49/40/409601
Autor:
L Montañez, F. De Zela, J. A. Guerra, Albrecht Winnacker, K. Tucto, Roland Weingärtner, J A Töfflinger
Publikováno v:
Journal of Physics D: Applied Physics. 49:375104
The effect of the annealing temperature on the light emission intensity of Tb-doped a-SiC:H thin films was investigated for different Tb concentrations under sub-bandgap photon excitation. We present a detailed discussion of rare-earth thermal activa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::babf71b1f0dad128d1d594993500b163
https://doi.org/10.1088/0022-3727/49/37/375104
https://doi.org/10.1088/0022-3727/49/37/375104
Akademický článek
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Publikováno v:
Journal of Physics D: Applied Physics; 10/12/2016, Vol. 49 Issue 40, p1-1, 1p
Publikováno v:
Journal of Physics D: Applied Physics; 9/21/2016, Vol. 49 Issue 37, p1-1, 1p
Conference
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