Zobrazeno 1 - 10
of 98
pro vyhledávání: '"K. Tokutome"'
Autor:
Tadahiko Sugibayashi, Shunsuke Fukami, Keizo Kinoshita, Sadahiko Miura, Hiroaki Honjo, Hideo Ohno, Michio Murahata, Noboru Sakimura, Ayuka Morioka, Yukihide Tsuji, K. Tokutome, Naoki Kasai, Ryusuke Nebashi, Kunihiko Ishihara
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
We have developed a three-terminal domain wall motion (DWM) device. We found that its performance was significantly degraded by ion irradiation to the DWM materials under conventional etching conditions with Ar/NH3/CO gas mixture plasma for the devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c56c50c325ebbda064e551ceb43d9f0
https://doi.org/10.1109/tmag.2014.2325019
https://doi.org/10.1109/tmag.2014.2325019
Autor:
K. Tokutome, K. Fukatsu, Akagawa Takeshi, N. Suzuki, Masayoshi Tsuji, Hiroshi Hatakeyama, Takayoshi Anan
Publikováno v:
IEEE Journal of Quantum Electronics. 46:890-897
In this paper, we describe high-speed 1.1-μm-range oxide-confined vertical-cavity surface-emitting lasers (VCSELs) for large-scale optical interconnection applications. For achieving high data rates up to 25 Gbit/s under high temperature, we applied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfadc9571d963fe5e59888a7a1c17ee
https://doi.org/10.1109/jqe.2010.2040583
https://doi.org/10.1109/jqe.2010.2040583
Autor:
K. Tokutome, Masayoshi Tsuji, Hiroshi Hatakeyama, K. Yashiki, N. Suzuki, K. Fukatsu, Takayoshi Anan, Akagawa Takeshi
Publikováno v:
IEICE Transactions on Electronics. :942-950
We have developed InGaAs-based VCSELs operating around 1.1µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25Gbps 100°
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51e4a151251bafc5934fa062d6436b7
https://doi.org/10.1587/transele.e92.c.942
https://doi.org/10.1587/transele.e92.c.942
Autor:
Sadahiko Miura, Tetsuo Endoh, Keizo Kinoshita, Takahiro Hanyu, Tadahiko Sugibayashi, Naoki Kasai, Noboru Sakimura, Ayuka Morioka, Hideo Ohno, Shunsuke Fukami, Kunihiko Ishihara, Ryusuke Nebashi, K. Tokutome, Yukihide Tsuji, Hiroaki Honjo
Publikováno v:
ISCAS
A delay circuit using four-terminal magnetic-random-access-memory (MRAM) devices was designed for power-efficient time-domain signal processing. A cell area of 6.4 μm 2 was obtained using 90-nm CMOS/MRAM technologies. The basic operations to both st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c45fe894961cf8beb9774e163b05d75
https://doi.org/10.1109/iscas.2014.6865453
https://doi.org/10.1109/iscas.2014.6865453
Akademický článek
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Autor:
Takayoshi Anan, K. Fukatsu, Masayoshi Tsuji, Hiroshi Hatakeyama, K. Tokutome, M. Yamada, N. Suzuki
Publikováno v:
IEEE Photonics Technology Letters. 18:1368-1370
We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mum. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ec70047fd3144aff8119bdaa1672e8
https://doi.org/10.1109/lpt.2006.877353
https://doi.org/10.1109/lpt.2006.877353
Autor:
N. Suzuki, K. Tokutome, T. Nakamura, Hiroshi Hatakeyama, Kenichi Nishi, M. Yamada, Takayoshi Anan
Publikováno v:
IEEE Photonics Technology Letters. 17:950-952
Low-threshold operation was demonstrated for a 1.34-/spl mu/m vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853935a2786c305b271a03fcba3a0f71
https://doi.org/10.1109/lpt.2005.844325
https://doi.org/10.1109/lpt.2005.844325
Autor:
Tetsuo Endoh, Hideo Ohno, Naoki Kasai, Michihiko Yamanouchi, Tadahiko Sugibayashi, Ryusuke Nebashi, Hiroaki Honjo, Noboru Sakimura, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, K. Tokutome, A. Morioka, Yukihide Tsuji, Takahiro Hanyu
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b457c0030032e0595e45137a0fb445a6
https://doi.org/10.7567/ssdm.2013.m-8-3
https://doi.org/10.7567/ssdm.2013.m-8-3
Autor:
Naoki Kasai, Hideo Ohno, Shinji Ikeda, Tetsuo Endoh, K. Tokutome, Sadahiko Miura, Hiroaki Honjo
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
We investigated perpendicular-anisotropy magnetic tunnel junctions (p-MTJ) with two types of MTJ structures prepared by etching. In MTJs with a base electrode which consisted of a tunnel barrier, a synthetic antiferromagnetic reference layer and a se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5719459055ebab6c2bf3a575d7e2beeb
https://doi.org/10.7567/ssdm.2013.ps-12-11
https://doi.org/10.7567/ssdm.2013.ps-12-11
Publikováno v:
Materia Japan. 35:338-342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf4119205b11f0331f4109e94a8bbd6
https://doi.org/10.2320/materia.35.338
https://doi.org/10.2320/materia.35.338