Zobrazeno 1 - 10
of 111
pro vyhledávání: '"K. Tapily"'
Autor:
R. Clark, K. Tapily, K.-H. Yu, T. Hakamata, S. Consiglio, D. O’Meara, C. Wajda, J. Smith, G. Leusink
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058203-058203-12 (2018)
This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and p
Externí odkaz:
https://doaj.org/article/ef5af56f499b406c9578174d9d6c44e8
Autor:
N. Gong, M.J. Rasch, S.-C. Seo, A. Gasasira, P. Solomon, V. Bragaglia, S. Consiglio, H. Higuchi, C. Park, K. Brew, P. Jamison, C. Catano, I. Saraf, F.F. Athena, C. Silvestre, X. Liu, B. Khan, N. Jain, S. Mcdermott, R. Johnson, I. Estrada-Raygoza, J. Li, T. Gokmen, N. Li, R. Pujari, F. Carta, H. Miyazoe, M.M. Frank, D. Koty, Q. Yang, R. Clark, K. Tapily, C. Wajda, A. Mosden, J. Shearer, A. Metz, S. Teehan, N. Saulnier, B. J. Offrein, T. Tsunomura, G. Leusink, V. Narayanan, T. Ando
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Robert D. Clark, Jae Hur, Steven Consiglio, Zheng Wang, Asif Islam Khan, K. Tapily, Shimeng Yu, Muhammad Mainul Islam, Nujhat Tasneem, Winston Chern, Hang Chen, Gert J. Leusink, Dina H. Triyoso
Publikováno v:
IEEE Electron Device Letters. 42:1156-1159
Despite tremendous interests in ferroelectric field-effect transistors (FEFETs) for embedded, data-centric applications, the fundamental trade-offs between memory window (MW) and write voltage to optimize performance remains poorly understood. To tha
Autor:
Steven Consiglio, Qingyun Yang, K. Tapily, Saraf Iqbal Rashid, Muthumanickam Sankarapandian, Paul C. Jamison, Tsunomura Takaaki, C. Catano, Robert D. Clark, T. Ando, R. Pujari, Vijay Narayanan, Hisashi Higuchi, Gerrit J. Leusink, Malte J. Rasch, R. Soave, Hongwen Yan, Ernest Y. Wu, Dexin Kong, Aelan Mosden, Peter Biolsi, Youngseok Kim, Robert R. Robison, O. van der Straten, D. Koty, S. McDermott, Soon-Cheon Seo, Hiroyuki Miyazoe, Son Nguyen, A. Gasasira, Nicole Saulnier, Wilfried Haensch, Sebastian Engelmann, C. S. Wajda, Ramachandran Muralidhar, S. DeVries
Publikováno v:
IEEE Electron Device Letters. 42:759-762
We demonstrate a novel process for building a Resistive RAM (ReRAM) stack which reduces the forming voltage ( $\text{V}_{\textit {form}}$ ) and increases the switching resistance, both characteristics that are important ingredients for the use of ReR
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Autor:
Dina H. Triyoso, K. Tapily, Gert J. Leusink, C. Mart, Steven Consiglio, Wenke Weinreich, C. S. Wajda, Robert D. Clark, Alain C. Diebold, Thomas Kampfe, Vineetha Mukundan
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Ferroelectric and antiferroelectric Hf/Zr-based oxide films have recently gained interest for memory and AI applications due to their promise of low power and CMOS compatibility. As Hf/Zr-based oxides are not ‘new’ materials, this paper will star
Autor:
K. Tapily, Robert D. Clark, Zheng Wang, Sebastian E. Reyes-Lillo, Kisung Chae, Steven Consiglio, Dina H. Triyoso, Gerrit J. Leusink, Kyeongjae Cho, Josh Kacher, Michael J. Hoffmann, Andrew C. Kummel, Asif Islam Khan, S. F. Lombardo, C.W. Nelson, Mengkun Tian, Nujhat Tasneem
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via insitu high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO 2 was
Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting
Publikováno v:
ECS Journal of Solid State Science and Technology
The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split an
Autor:
Durga Misra, K. Tapily, Gert J. Leusink, Cory Wajda, Robert D. Clark, Yi Ming Ding, S. Consiglio
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:349-354
This paper investigates the p-Ge/Al2O3/ZrO2/TiN gate stacks that were subjected to different slot plane antenna oxidation (SPAO) conditions: 1) prior to any high-k atomic layer deposition (ALD); 2) in between Al2O3 and ZrO2ALD layers; and 3) after th
Autor:
K. Tapily, Gerrit J. Leusink, K. Yu, Alain C. Diebold, T. Hasegawa, Robert D. Clark, Steven Consiglio, Sonal Dey, C. S. Wajda
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P509-P513