Zobrazeno 1 - 10
of 62
pro vyhledávání: '"K. Tallman"'
Publikováno v:
Journal of Investigative Dermatology. 143:S124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a738db268e5612f63d3b448642085b0
https://doi.org/10.1016/j.jid.2023.03.727
https://doi.org/10.1016/j.jid.2023.03.727
Autor:
Muhammad Sana Ullah, Drew K. Tallman
Publikováno v:
Global Journal of Science Frontier Research. :9-14
This research paper focuses on the effects of electromigration in integrated circuits at the nanoscale domain. This is an investigative work that shows how various process and parametric variation effects on electromigration. With integrated circuits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d46502141ef6daa753fbaab9a1879a9
https://doi.org/10.34257/gjsfravol18is9pg9
https://doi.org/10.34257/gjsfravol18is9pg9
Akademický článek
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Autor:
Robert J. Polastre, Jamil A. Wakil, John U. Knickerbocker, Evan G. Colgan, K. Tallman, Jeffrey P. Gambino
Publikováno v:
29th IEEE Semiconductor Thermal Measurement and Management Symposium.
The thermal resistances of thirty-nine different back end of line (BEOL) test sites consisting of four line levels and three via levels in SiCOH were measured. The measured unit resistance values ranged from 0.5 to 5.5 C-mm2/W. The percent via area w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8476977a1089484ddc59314c38b957e6
https://doi.org/10.1109/semi-therm.2013.6526800
https://doi.org/10.1109/semi-therm.2013.6526800
Publikováno v:
The Journals of Gerontology Series B: Psychological Sciences and Social Sciences. :S173-S181
The driving records of 249 persons referred to an outpatient dementia clinic were examined retrospectively to assess the specificity of the association between diagnosed dementia and increased traffic accidents. The clinic patients were divided into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c24da10f96f4e962e58cd7db362ae6b
https://doi.org/10.1093/geronb/50b.3.s173
https://doi.org/10.1093/geronb/50b.3.s173
Autor:
H. Ng, J. Oberschmidt, Michael J. Hargrove, Ronald D. Goldblatt, X. Chen, Deborah A. Ryan, E. J. Nowak, K. Tallman, T. Wagner, Stephen E. Greco, C. DeWan, Bijan Davari, E. Barth, J. Connolly, Klaus Dietrich Beyer, Richard A. Ferguson, Paul D. Agnello, P. McLaughlin, Emmanuel F. Crabbe, S. Crowder, R. Logan, Vincent J. McGahay, Robert J. Purtell, L. Su, Asit Kumar Ray, G. A. Biery
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
In this paper, we describe a high-performance 0.18 /spl mu/m logic technology with dual damascene copper metallization and dense SRAM memory. Local interconnect technology allows us to fabricate SRAM cells as small as 3.84 /spl mu/m/sup 2/. We demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2f55f6d9842bd12f56888f942545bc
https://doi.org/10.1109/vlsit.1999.799362
https://doi.org/10.1109/vlsit.1999.799362
Autor:
E. Eld, R. Schulz, T. Wagner, Daniel C. Edelstein, Janet S. Herman, William J. Cote, C. Guenther, L. Su, H. Ng, John E. Heidenreich, R. Gehres, K. Beyer, N. Greco, C. Megivern, Asit Kumar Ray, J. Oberschmidt, G. A. Biery, J. McKenna, D. Kiesling, Bijan Davari, D. Foster, Ronald D. Goldblatt, Norman J. Rohrer, K. Tallman, J. Ellis-Monaghan, Emmanuel F. Crabbe, James W. Adkisson, S.-H. Lo, L. Lin
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
A sub-0.25 /spl mu/m technology in manufacturing that is targeted for high-performance CMOS applications is discussed. Aggressive groundrule scaling including SRAM cell size down to 5.4 /spl mu/m/sup 2/ is combined with multiple threshold voltage dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63495eea98cb264eda546d513ed0cc30
https://doi.org/10.1109/vlsit.1998.689182
https://doi.org/10.1109/vlsit.1998.689182
Publikováno v:
Optometry (St. Louis, Mo.). 71(12)
The Department of Veterans Affairs LVES Study is a multicenter study to determine the effectiveness of the Low Vision Enhancement System (LVES) as a visual rehabilitation device. The purpose of this study was to explore the efficacy of the Beta 1 man
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::bba46e7c4592efbc8cef94bc08bfc912
https://pubmed.ncbi.nlm.nih.gov/11145301
https://pubmed.ncbi.nlm.nih.gov/11145301
Akademický článek
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Conference
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