Zobrazeno 1 - 9
of 9
pro vyhledávání: '"K. T. Posani"'
Publikováno v:
SPIE Proceedings.
Optimization of various growth parameters for Type-II GaSb (10MLs)/InAs(10MLs) nanoscale superlattices (SL) and GaSb layers, grown by solid molecular beam epitaxy, has been undertaken. We present optical and structural characterization for these hete
Autor:
Oskar Painter, Orion Crisafulli, Raviv Perahia, K. T. Posani, N. R. Weisse-Bernstein, V. Tripathi, Sanjay Krishna, Senthil Annamalai
We report high performance infrared sensors that are based on intersubband transitions in nanoscale self-assembled quantum dots combined with a microcavity resonator made with a high-index-contrast two-dimensional photonic crystal. The addition of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f30ac5ad91b728deac819dd80d81e5cf
https://resolver.caltech.edu/CaltechAUTHORS:POSapl06
https://resolver.caltech.edu/CaltechAUTHORS:POSapl06
Autor:
K. T. Posani, Oskar Painter, Senthil Annamalai, Raviv Perahia, Sanjay Krishna, Vaibhav Tripathi, Orion Crisafulli
In this paper we report the use of a photonic crystal resonant cavity to increase the quantum efficiency, detectivity (D*) and the background limited infrared photodetector (BLIP) temperature of a quantum dot detector. The photonic crystal is incorpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d78ff7bfc878ff3a82af6d9fb62af99f
https://resolver.caltech.edu/CaltechAUTHORS:20180709-163430790
https://resolver.caltech.edu/CaltechAUTHORS:20180709-163430790
Publikováno v:
2005 IEEE LEOS Annual Meeting Conference Proceedings.
This paper reports the use a photonic crystal resonant cavity to increase the quantum efficiency, detectivity, and the background limited infrared photodetector temperature of the quantum dot detector. The results of spectral response measurements of
Autor:
K. T. Posani, Jiayi Shao, R. S. Attaluri, J. S. Brown, Sanjay Krishna, Sang Jun Lee, Andreas Stintz
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1186
The authors demonstrate the design, growth, fabrication, and characterization of resonant cavity enhanced InAs∕In0.15Ga0.85As dots-in-a-well (RC-DWELL) quantum dot infrared photodetector (QDIP) and compare it with a standard DWELL detector. They me
Autor:
Sanjay Krishna, Unal Sakoglu, K. T. Posani, J. Scott Tyo, Philip Dowd, Senthil Annamalai, Majeed M. Hayat
Publikováno v:
Applied Optics. 45:7224
It has recently been reported that by using a spectral-tuning algorithm, the photocurrents of multiple detectors with spectrally overlapping responsivities can be optimally combined to synthesize, within certain limits, the response of a detector wit
Publikováno v:
Journal of Applied Physics. 100:014510
We report the growth and fabrication of midwave infrared InAs∕GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS (Δa‖∕a=−5×10−4), enabling the growth of
Publikováno v:
Journal of Applied Physics. 99:083105
The effects of doping on InAs∕In0.15Ga0.85As quantum dots-in-well infrared photodetectors have been studied by measuring the dark current, photocurrent, and spectral response. A significant reduction of dark current with decrease in doping concentr
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:1553
The effects of doping on InAs∕In0.15Ga0.85As quantum dots-in-well infrared photodetectors have been investigated by measuring the dark current, photocurrent, spectral response, responsivity, and detectivity. The dark current increased monotonically