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Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1182-1184
At higher temperatures HgCdTe photodiode dark currents are usually limited by bulk material properties exhibited as diffusion currents. As the temperature is decreased diode the dark currents transition to a region of smaller temperature dependence c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f4675b4040df511d31cd0a51c75fcd
https://doi.org/10.1116/1.576941
https://doi.org/10.1116/1.576941
Akademický článek
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Autor:
Bilevych, Ye. O.1, Boka, A.I.1, Darchuk, L.O.1, Gumenjuk-Sichevska, J.V.1, Sizov, F.F.1, Boelling, O.2, Sulkio-Cleff, B.2
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004, Vol. 7 Issue 2, p129-132. 4p.
Autor:
Antoni Rogalski
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents in
Autor:
Piotrowski, Józef F.
This book presents approaches, materials, and devices that eliminate the cooling requirements of IR photodetectors operating in the middle- and long-wavelength ranges of the IR spectrum. It is based mainly on the authors'experiences in developing and
Autor:
Rogalski, Antoni
Infrared Detectors provides comprehensive coverage of this important aspect of infrared technology, including details of recent research efforts directed toward improving the performance of single element devices, large electronically scanned arrays,
Autor:
Rogalski, Antoni
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V a