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pro vyhledávání: '"K. Sai Anurag"'
Autor:
Kalivaraprasad B, S. Ravi Chand, S. Koteswari, P. Madhu Sudhan Reddy, K. Sai Anurag, K. Palanivel Rajan
Publikováno v:
International Journal on Recent and Innovation Trends in Computing and Communication. 11:224-231
The purpose of this research was to suggest a junction-less strategy for a vertical Tunnel Field Effect Transistor, which would increase the device's efficiency. In this study, we examine the similarities and differences between a negative capacitor
Autor:
K. Sivasankaran, T.R.K Kumar Chitroju, M. Sai Subrahmanyam, K. Sai Anurag Reddy, M. Viswanath Sri Harsha, P.S. Mallik
Publikováno v:
2014 International Conference on Advances in Electrical Engineering (ICAEE).
This paper presents the Radio Frequency Performance of gate engineered FinFET. Gate engineering is process of implementing different materials with different work functions on gate of device, and studying its impact on device operation. We have analy
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