Zobrazeno 1 - 10
of 26
pro vyhledávání: '"K. S. Ul'yanitskii"'
Autor:
A. V. Savitskii, S. N. Chupyra, N. D. Vakhnyak, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ul'yanitskii
Publikováno v:
Scopus-Elsevier
The electrical properties in the temperature range 295–430 K and low-temperature (4.2 K) photoluminescence of Cd1−xZnxTe:Cl semi-insulating crystals grown from melts with a variable impurity content (CCl0 = 5 × 1017–1 × 1019 cm−3) are inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b7a4fcdf27c585385a5c5b984135b01
https://doi.org/10.1134/1.1992628
https://doi.org/10.1134/1.1992628
Autor:
S. N. Chupyra, P. N. Gorlei, M. I. Ilashchuk, K. S. Ul'yanitskii, O. A. Parfenyuk, V. R. Burachek
Publikováno v:
Inorganic Materials. 39:1127-1131
The spectral and temperature dependences of photoconductivity in CdTe〈Pb〉 crystals under band-gap and combined excitation were studied at photon energies in the range 0.53–1.7 eV and temperatures from 80 to 300 K. The high photosensitivity of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b584de46bedb865424e5b1b62ced0a
https://doi.org/10.1023/a:1027385122472
https://doi.org/10.1023/a:1027385122472
Publikováno v:
Inorganic Materials. 36:871-873
Heterojunctions in then-CdTe-p-ZnTe system were prepared via solid-state substitutions, and their properties were studied. Under small forward bias, the current-voltage characteristics of the heterojunctions, both in the dark and under illumination,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a36c3a38728c8d989db2f58f66b630
https://doi.org/10.1007/bf02758694
https://doi.org/10.1007/bf02758694
Publikováno v:
Russian Physics Journal. 36:1109-1111
The equilibrium properties of CdTe:Ge crystals grown by the Bridgman method with a low impurity content (NGe≲2·1016 cm−3) are investigated. The resistivity ρ of the crystal increases gradually as NGe increases, and the changes in the properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b36dfb65472bf4402d2abd7102af68ff
https://doi.org/10.1007/bf00559683
https://doi.org/10.1007/bf00559683
Autor:
K. S. Ul'yanitskii, S. V. Mel'nichuk, V. G. Deibuk, V. I. Chobotar, A. V. Savitskii, V. M. Nitsovich
Publikováno v:
Soviet Physics Journal. 25:311-314
The possibility of substantial influence of a manganese impurity on the magnetic and optical properties of CdTe, which is explained by the state and interaction of the Mn 3d5-electron spins in the CdTe crystal lattice, is shown in [1–3]. An investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1613e5654e2c241e6950da43e1f34254
https://doi.org/10.1007/bf00906198
https://doi.org/10.1007/bf00906198
Autor:
Alalykin, S.1, Dedyukhin, A.1, Zakirova, R.1, Kobziev, V.1, Kostenkov, N.1, Krylov, P.1, Fedotova, I.1 ftt@udsu.ru
Publikováno v:
Technical Physics. May2017, Vol. 62 Issue 5, p773-776. 4p.
Autor:
Nuriyev, I.1, Mehrabova, M.2 m.mehrabova@science.az, Nazarov, A.1, Sadigov, R.1, Hasanov, N.3
Publikováno v:
Semiconductors. Jan2017, Vol. 51 Issue 1, p34-37. 4p.
Autor:
Krylov, P.1 ftt@udsu.ru, Zakirova, R.1, Kobziev, V.1, Kostenkov, N.1, Fedotova, I.1, Khamidullin, R.1, Dedyukhin, A.1
Publikováno v:
Technical Physics. Jul2016, Vol. 61 Issue 7, p1027-1031. 5p. 1 Diagram, 5 Graphs.
Autor:
Kosyachenko, L.1 lakos@chv.ukrpack.net, Yurtsenyuk, N.1, Rarenko, I.1, Sklyarchuk, V.1, Sklyarchuk, O.1, Zakharuk, Z.1, Grushko, E.1
Publikováno v:
Semiconductors. Jul2013, Vol. 47 Issue 7, p916-924. 9p.
Publikováno v:
Semiconductors. Jun2013, Vol. 47 Issue 6, p799-803. 5p.