Zobrazeno 1 - 3
of 3
pro vyhledávání: '"K. S. Sen'chenko"'
Publikováno v:
Russian Microelectronics. 46:454-457
The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0307add7f08c4712ea1b1d7b8ef7e1
https://doi.org/10.1134/s1063739717070095
https://doi.org/10.1134/s1063739717070095
Publikováno v:
Russian Microelectronics. 45:324-328
Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9837e138f7286321cd1abf098e0eb290
https://doi.org/10.1134/s1063739716040090
https://doi.org/10.1134/s1063739716040090
Publikováno v:
Inorganic Materials. 51:294-298
This paper considers electrochemical tin deposition for producing contact elements in integrated circuit packaging. We examine the effect of organic additives to sulfate electrolytes on the growth of local vertical structures, with the aim of suppres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f1830da3b02dadb3facc3a42dd0e4e7
https://doi.org/10.1134/s0020168515030139
https://doi.org/10.1134/s0020168515030139