Zobrazeno 1 - 7
of 7
pro vyhledávání: '"K. S. Ramaiah"'
Autor:
M. A. Reshchikov, K. Y. Lee, Feng Yun, C. Sone, Jacek B. Jasinski, Hadis Morkoç, Zuzanna Liliental-Weber, K. S. Ramaiah, Daming Huang, Sang-Yong Park
Publikováno v:
Journal of Materials Science: Materials in Electronics. 14:233-245
Structural and optical studies have been performed on GaN, InGaN layers, In0.08Ga0.92N/GaN heterostructures, In0.08Ga0.92N/In0.02Ga0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fb9f72540230591d50ac2f75037218
https://doi.org/10.1023/a:1022938114450
https://doi.org/10.1023/a:1022938114450
Publikováno v:
Journal of Electroanalytical Chemistry. 436:49-52
Polycrystalline thin films of lead sulphide were electrodeposited on titanium, aluminium and stainless steel (SS) substrates at a constant potential of -0.7V vs. Ag\AgCl\(sat)KCl electrode using 1 mM solutions of Pb(NO,), and Na2S2O3 at pH2.7, 2.8 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f3dbcfecc75c3629420233c5d8d2baf
https://doi.org/10.1016/s0022-0728(97)00124-1
https://doi.org/10.1016/s0022-0728(97)00124-1
Autor:
Yan-Kuin Su, K. S. Ramaiah, F. S. Juang, Chin-Hsiang Chen, Shoou-Jinn Chang, H. P. Liu, In-Gann Chen
Publikováno v:
Applied Physics Letters. 85:401-403
InGaN(3nm)∕GaN(5nm) three period multiquantum green-light-emitting diodes (LEDs) grown by the metalorganic chemical vapor deposition technique have been studied using high-resolution transmission electron microscopy (HRTEM), double crystal high res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1034f20770fae4b976e0891b9c766263
https://doi.org/10.1063/1.1773371
https://doi.org/10.1063/1.1773371
Publikováno v:
Applied Physics Letters. 84:3307-3309
The structural, surface morphology, and the temperature dependence photoluminescence of InGaN~ 3n m!/GaN~ 7n m! 5 period multi-quantum-well blue-light-emitting diode ~LED! structures grown by metal organic chemical vapor deposition ~MOCVD! have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ebb5d822334193c6287576c8a7b018
https://doi.org/10.1063/1.1728302
https://doi.org/10.1063/1.1728302
Autor:
L. He, Jiayu Chen, Faxian Xiu, Steve Puntigan, Hadis Morkoç, B. Pattada, K. S. Ramaiah, Qiaoying Zhou, M. O. Manasreh
Publikováno v:
Journal of Applied Physics. 93:10140-10142
Intersubband transitions in Si-doped molecular beam epitaxy grown GaN/AlGaN multiple quantum wells on c-plane sapphire were investigated using the Fourier-transform infrared optical absorption technique. Several GaN quantum well samples were grown wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452cb269cf5e49b02b0ea772935fcfcc
https://doi.org/10.1063/1.1577809
https://doi.org/10.1063/1.1577809
Publikováno v:
ChemInform. 29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44ef16312781b41c2bbd1f7e3fb7083a
https://doi.org/10.1002/chin.199814023
https://doi.org/10.1002/chin.199814023
Publikováno v:
Journal of Materials Science: Materials in Electronics; Apr2003, Vol. 14 Issue 4, p233-245, 13p