Zobrazeno 1 - 10
of 25
pro vyhledávání: '"K. S. Nahm"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:5698-5701
A TiO2-modified carbon (C-TiO2) has been employed as a catalyst support of Pd3Co alloy for electroduction of oxygen. Due to the strong interaction between highly dispersed TiO2 and Pd3Co alloy, the C-TiO2 support was shown to be effective for a fine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694acdd0d43061786f294d9e2af8da9e
https://doi.org/10.1166/jnn.2013.7057
https://doi.org/10.1166/jnn.2013.7057
Publikováno v:
Science of Advanced Materials. 5:606-611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5739e1ad8521b8f7ff9d60ad0bbad073
https://doi.org/10.1166/sam.2013.1495
https://doi.org/10.1166/sam.2013.1495
Publikováno v:
The Journal of Physical Chemistry C. 111:7527-7531
Carbon materials were synthesized from banana fibers by treating the fibers with pore-forming substances such as ZnCl2 and KOH with an intention to improve the surface area and their electrochemical performance as electrical double-layer capacitor el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f1f83d01879acebefed5db0f15489b0
https://doi.org/10.1021/jp067009t
https://doi.org/10.1021/jp067009t
Publikováno v:
Journal of Applied Electrochemistry. 32:1229-1233
The structural and electrochemical properties of LiNiO2 powders were investigated as a function of the oxygen flow rate employed in the preparation of lithium nickel oxide. It was found that oxygen played an important role in the synthesis of highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b0dc481b25493925035a4a4fd1afb6
https://doi.org/10.1023/a:1021606712486
https://doi.org/10.1023/a:1021606712486
Publikováno v:
physica status solidi (a). 188:527-530
High-quality GaN films were grown on Si(111) substrate using 3C-SiC intermediate layer by metal-organic chemical vapor deposition. The 3C-SiC intermediate layer was grown on the Si(111) substrate by chemical vapor deposition using tetramethylsilane a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c7d129d41edb1cc8d4722e8031af10
https://doi.org/10.1002/1521-396x(200112)188:2<527::aid-pssa527>3.0.co
https://doi.org/10.1002/1521-396x(200112)188:2<527::aid-pssa527>3.0.co
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2226-2233
We have used a rapid thermal chemical vapor deposition technique to grow epitaxial SiC thin films on Si wafers by pyrolyzing tetramethylsilane (TMS). The films were observed to grow along the (111) direction of 3C–SiC at temperatures above 1000 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4297e6ad6ceb95b74b4a1d608a6c91
https://doi.org/10.1116/1.580538
https://doi.org/10.1116/1.580538
Autor:
H.‐J. Lee, Y. H. Seo, D.‐H. Oh, K. S. Nahm, Y. B. Hahn, I. C. Jeon, E.‐K. Suh, Y. H. Lee, H. J. Lee
Publikováno v:
Journal of Applied Physics. 75:8060-8065
It has long been argued whether the luminescent mechanism of anodized porous silicon is mainly due to the chemical compounds such as siloxene derivatives, or the quantum size effect. We performed a comprehensive study using atomic force microscope, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b8047bd9f9008573c2e7356cb9d1da
https://doi.org/10.1063/1.356547
https://doi.org/10.1063/1.356547
Autor:
N. W. Namgung, D. H. Lim, Hyung Jae Lee, Gye Mo Yang, K. S. Nahm, M. G. Cheong, K. S. Kim, Chang-Hee Hong, Eun-Kyung Suh, C. S. Oh, A. Yoshikawa, Kee Young Lim
Publikováno v:
Applied Physics Letters. 77:2557-2559
Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::390d55f719425fea054d9f81910298e2
https://doi.org/10.1063/1.1318728
https://doi.org/10.1063/1.1318728
Publikováno v:
Applied Physics Letters. 70:1757-1759
Single crystal 3C-SiC epitaxial films are grown on Si(111) surfaces using tetramethylsilane by rapid thermal chemical vapor deposition. Strong blue/green photoluminescence (PL) was observed at room temperature from the free films of SiC prepared by e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1749eed91be97b418dbc6dc5da9e8a
https://doi.org/10.1063/1.118648
https://doi.org/10.1063/1.118648
Autor:
Y. H. Seo, H.‐J. Lee, H. I. Jeon, D. H. Oh, K. S. Nahm, Y. H. Lee, E.‐K. Suh, H. J. Lee, Y. G. Kwang
Publikováno v:
Applied Physics Letters. 62:1812-1814
Porous silicon layers prepared by anodic dissolutions of silicon wafers in aqueous HF solutions reveal either crystalline phase or intermediate phase between microcrystalline and amorphous phases, depending on the anodization conditions. The configur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed06806b18741f6fc8911a79ee59fd7
https://doi.org/10.1063/1.109557
https://doi.org/10.1063/1.109557