Zobrazeno 1 - 7
of 7
pro vyhledávání: '"K. S. Davydovskaya"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 17:397-400
Autor:
A. A. Lebedev, V. V. Kozlovski, M. E. Levinshtein, D. A. Malevsky, G. A. Oganesyan, A. M. Strel’chuk, K. S. Davydovskaya
Publikováno v:
Semiconductors. 56:189-194
Publikováno v:
Semiconductors. 52:1635-1637
JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers a
Autor:
K. S. Davydovskaya, A.E. Ivanov, M E Levinshtein, Alexander A. Lebedev, A. V. Zubov, Vitali V. Kozlovski, V.S. Yuferev
Publikováno v:
Radiation Physics and Chemistry. 185:109514
Impact of high temperature electron irradiation on the characteristics of power silicon carbide-based semiconductor devices was studied for the first time. Commercial 4H–SiC integrated Schottky diodes (JBS) with blocking voltage of 1700 V were irra
Publikováno v:
Technical Physics Letters. 43:1027-1029
The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N d –N a ) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electr
Autor:
I. A. Eliseyev, A. E. Nikolaev, Alexander N. Smirnov, A. A. Lebedev, A. V. Zubov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, W. V. Lundin, V. Yu. Davydov, Vitalii V. Kozlovski, D. A. Zakheim, K. S. Davydovskaya
Publikováno v:
Journal of Physics: Conference Series. 1697:012073
Radiation hardness of different types of GaN based epitaxial structures which can be used as elements of electronic devices is studied by Hall effect,CV and IV measurements, as well as photoluminescence and Raman scattering. It is shown that proton i
Autor:
Alexander A. Lebedev, Natalja Sleptsuk, Oleg Korolkov, Vitali V. Kozlovski, K. S. Davydovskaya, Jana Toompuu
Publikováno v:
Materials Science Forum
In this paper investigation of degradation 4H SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV was doine. It was determined the carrier removal rate (Vd), which amounted to 0.07 - 0.09 cm-1. It is shown that the