Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K. S. Boutros"'
Autor:
Kang L. Wang, R. Li, Joan M. Redwing, R.P. Smith, Yihang Chen, S. J. Cai, K. S. Boutros, L. Wong, S. C. Martin
Publikováno v:
IEEE Electron Device Letters. 20:323-325
An Al/sub 0.3/Ga/sub 0.7/N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-/spl mu/m gate length is reported. A source-drain ohmic contact resistance of 0.15-/spl Omega/-mm was achieved through the use of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eda9ac13e7a50ff9923b49cd23d4938
https://doi.org/10.1109/55.772364
https://doi.org/10.1109/55.772364
Publikováno v:
Applied Physics Letters. 73:238-240
The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f74706efbaa98f50e8a3e4084f4c140
https://doi.org/10.1063/1.121767
https://doi.org/10.1063/1.121767
Publikováno v:
Applied Physics Letters. 71:267-269
Tungsten films, grown by plasma-enhanced chemical vapor deposition for very large scale integration interconnect applications, suffer from a high internal tensile stress that leads to contact failure. We show with wafer curvature measurements that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92649f1f7287ae3a449f0a206f611812
https://doi.org/10.1063/1.119515
https://doi.org/10.1063/1.119515
Publikováno v:
2006 IEEE Compound Semiconductor Integrated Circuit Symposium; 2006, p93-95, 3p
Autor:
Neal G. Anderson, V. M. Phanse, G.M. Smith, R. P. Vaudo, T. R. Tolliver, Joan M. Redwing, J. S. Flynn, K. S. Boutros
Publikováno v:
Scopus-Elsevier
We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaNon- sapphire substrates. The use of these substrates facilitates the III-nitrides growth p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f395a535d2c17b7742d8fb9edb6b80a
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031345065&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031345065&partnerID=MN8TOARS
