Zobrazeno 1 - 10
of 57
pro vyhledávání: '"K. S. Ayupov"'
Publikováno v:
Physical Sciences and Technology, Vol 9, Iss 1 (2022)
Currently, there is a growing need for high-performance photocells with increased stability of parameters to external influences, such as thermal and radiation resistance. This work is devoted to the study of photocells available in the volume of an
Externí odkaz:
https://doaj.org/article/118a81fa9aed4fb28820d251995a8b00
Autor:
S. B. Isamov, S. A. Tachilin, M. K. Bakhadyrkhanov, G. Kh. Mavlonov, Kh. M. Iliev, K. S. Ayupov
Publikováno v:
Technical Physics. 64:385-388
Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a si
Autor:
G. Kh. Mavlonov, M. K. Bakhadyrkhanov, Kh. M. Iliev, S. B. Isamov, Z.M. Saparniyazova, K. S. Ayupov, S. A. Tachilin
Publikováno v:
Inorganic Materials. 47:479-483
We have studied the transport properties of silicon doped with manganese via low-temperature diffusion. The material exhibits colossal photoconductivity in the extrinsic region (1.5–3 μm), an abnormally high negative magnetoresistance, and a tempe
Autor:
C. A. Tachilin, K. S. Ayupov, M. K. Bakhadirkhanov, O. E. Sattarov, G. H. Mavlonov, X. M. Iliev
Publikováno v:
Semiconductors. 48:986-988
It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated p-(Si:B):Mn, but also in overcompensated n-(Si:B):Mn with a Fermi level of F = EC − 0.35 eV ÷ EC − 0.55 eV. The magnitude and
Publikováno v:
Russian Microelectronics. 39:401-404
In this work, specific features of photoconductivity of silicon with multicharge nanoclusters of manganese atoms are investigated. It is shown that for such samples, anomalously high impurity photoconductivity is observed in the spectral region λ =
Publikováno v:
Semiconductors. 44:1145-1148
It is experimentally shown that an anomalously high negative magnetoresistance is observed in silicon with manganese-atom complexes [Mn]4 at room temperature. It is established that the negative magnetoresistance has the largest value at T = 230–24
Publikováno v:
Technical Physics Letters. 36:741-744
It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can b
Autor:
K. S. Ayupov, S. A. Tachilin, G. Kh. Mavlonov, O. E. Sattarov, M. K. Bakhadyrkhanov, Kh. M. Iliev, S. B. Isamov
Publikováno v:
Surface Engineering and Applied Electrochemistry. 46:276-280
The features of the photoelectric properties of silicon with multicharged nanoclusters of manganese atoms are studied. The patterns of change in the multiplicity of the charge state of the nanoclusters as a function of the Fermi level position are de
Autor:
K. S. Ayupov, M. K. Bakhadyrkhanov, P. Yu. Krivenko, R. L. Kholmukhamedov, B. A. Abdurakhmonov, Kh. M. Iliev
Publikováno v:
Inorganic Materials. 47:962-964
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additi
Publikováno v:
Technical Physics Letters. 29:705-707
The phenomenon of negative magnetoresistance in compensated silicon doped with manganese has been studied. The possibility of using this effect in magnetic field sensors is assessed.