Zobrazeno 1 - 10
of 17
pro vyhledávání: '"K. S. A. Butcher"'
Publikováno v:
Annals of the Royal College of Surgeons of England. 103(4)
We review two different presentations of non-parasitic splenic cysts, both of which are post-traumatic in aetiology. The first case was of slower onset and was managed electively. The second case was of acute onset and was managed as an emergency. No
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab336b3072cdb3c9c186c43d4c120a60
https://pubmed.ncbi.nlm.nih.gov/33661055
https://pubmed.ncbi.nlm.nih.gov/33661055
Autor:
T.L. Tansley, K. S. A. Butcher
Publikováno v:
Journal of Applied Physics. 90:6217-6221
Aluminum nitride insulating layers have been grown at room temperature with a film resistivity of 3.3×1016 Ω cm on mercury cadmium telluride substrates. Insulator breakdown fields of 640 MV/m were reached. Capacitance–voltage measurements with Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0559751c46f23d5609c177b0b86b9cb8
https://doi.org/10.1063/1.1415532
https://doi.org/10.1063/1.1415532
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:90-96
Poor film adhesion to mercury cadmium telluride is a problem of general concern because of the low film deposition temperatures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08beb767a1d17b9721d4d091d8ed75d5
https://doi.org/10.1116/1.1326937
https://doi.org/10.1116/1.1326937
Publikováno v:
Journal of Materials Research. 11:1244-1254
A process for the formation of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs has been refined using multivariable screening and response surface experiments. Samples from the refined, low-resistance process (which measure 0.05 ± 0.02 Ω · m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5f9186674beb3f6fce063ddbec67b8
https://doi.org/10.1557/jmr.1996.0159
https://doi.org/10.1557/jmr.1996.0159
Publikováno v:
Solid State Communications. 98:751-754
We report on the effects of hydrogenation of InSb GaAs epilayers. The as-grown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV impurity, however, is fully passivated during protonation in a hydrogen microwave plasma, rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4c1169b7f8c68f24b32db5fde88a48c
https://doi.org/10.1016/0038-1098(96)00125-1
https://doi.org/10.1016/0038-1098(96)00125-1
Publikováno v:
Semiconductor Science and Technology. 8:1451-1458
Nuclear radiation detectors constructed from GaAs Schottky barrier structures require control of barrier height if high resolution is to be reproducibly obtained. The authors have therefore studied the variation of device barrier height after treatme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36bda792ae0629ea3dd5943f189e9672
https://doi.org/10.1088/0268-1242/8/7/041
https://doi.org/10.1088/0268-1242/8/7/041
Publikováno v:
Journal of Fluids and Structures. 6:163-180
Previous experiments on collapsed-tube self-excited oscillation have shown that the resistance to flow downstream of the tube controls whether a given operating point is stable, oscillatory or divergent. This paper extends the documentation of those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c293ffc206d3b1e435eccfceb5da3377
https://doi.org/10.1016/0889-9746(92)90043-3
https://doi.org/10.1016/0889-9746(92)90043-3
Autor:
K. S. A. Butcher, T. Dabbs, A. J. Fernandes, R. Carmen, P. P.-T. Chen, M. Wintrebert-Fouquet, Conor Martin
Publikováno v:
SPIE Proceedings.
The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d19b8e100038628195b2b45dcc1e4a
https://doi.org/10.1117/12.762537
https://doi.org/10.1117/12.762537
Publikováno v:
WIT Transactions on Modelling and Simulation, Vol 46.
A new metric system called the electron metric system, having a basic metric constant, is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09384db1cff160898975af90018a0f7c
https://doi.org/10.2495/cmem070081
https://doi.org/10.2495/cmem070081
Carbon nitride thin films prepared by radio frequency reactive sputtering of graphite in pure nitrogen plasma have been characterized by x‐ray photoelectron spectroscopy (XPS) for probing the chemical bonding in the films. The multiple binding ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::257b7f04333f30ce3d3def6a384f35e2
https://hdl.handle.net/1959.8/40862
https://hdl.handle.net/1959.8/40862
