Zobrazeno 1 - 10
of 137
pro vyhledávání: '"K. Rott"'
Autor:
L. Marnitz, K. Rott, S. Niehörster, C. Klewe, D. Meier, S. Fabretti, M. Witziok, A. Krampf, O. Kuschel, T. Schemme, K. Kuepper, J. Wollschläger, A. Thomas, G. Reiss, T. Kuschel
Publikováno v:
AIP Advances, Vol 5, Iss 4, Pp 047103-047103-7 (2015)
Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign
Externí odkaz:
https://doaj.org/article/1000d2f9df9b4654b478860339eadd3a
Autor:
Carsten Schäffer, Frank Umbach, Nicolas Heuck, Holger Schulze, Martin Kerber, Daniel Bolowski, Karsten Guth, Frank Hille, Alexander Ciliox, Roman Roth, K. Rott
Publikováno v:
Microelectronics Reliability. 64:393-402
The introduction of thick copper metallization and topside interconnects as well as a superior die attach technology is improving the performance and reliability of IGBT power transistor technologies significantly. The much higher specific heat capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40542cd70c27a59476792e683193e9e6
https://doi.org/10.1016/j.microrel.2016.07.119
https://doi.org/10.1016/j.microrel.2016.07.119
Autor:
Hans Reisinger, Yury Yu. Illarionov, Markus Bina, Stanislav Tyaginov, K. Rott, Ben Kaczer, Tibor Grasser
Publikováno v:
IEEE Transactions on Electron Devices. 62:2730-2737
A novel method for the extraction of the lateral position of border traps in nanoscale MOSFETs is presented. Using technology computer-aided design (TCAD) simulations, we demonstrate that the dependence of the trap-induced threshold voltage shift on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1382fa8a2a5eb10c0347bad6cec75b50
https://doi.org/10.1109/ted.2015.2454433
https://doi.org/10.1109/ted.2015.2454433
Autor:
Hans Reisinger, K. Kölpin, Stefano Aresu, Tibor Grasser, Christian Schlunder, Wolfgang Gustin, K. Rott
Publikováno v:
Microelectronics Reliability. 52:1891-1894
The physical origin of both Negative- and Positive Bias Temperature Instability (N-/PBTI) is still unclear and under debate. We analyzed the rarely studied recovery behavior after PBTI stress in pMOSFETs and compared it with NBTI data obtained from t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9259699327a1bb0fd9c69d47c95a0ee0
https://doi.org/10.1016/j.microrel.2012.06.015
https://doi.org/10.1016/j.microrel.2012.06.015
Akademický článek
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Autor:
Franz Schanovsky, Alexander L. Shluger, Yannick Wimmer, K. Rott, Valery V. Afanas'ev, Michael Waltl, Gerhard Rzepa, Tibor Grasser, Al-Moatasem El-Sayed, Andre Stesmans, Wolfgang Goes, Hans Reisinger
Publikováno v:
2014 IEEE International Electron Devices Meeting.
Hole trapping in the gate insulator of pMOS transistors has been linked to a wide range of detrimental phenomena, including random telegraph noise (RTN), 1/ f noise, negative bias temperature instability (NBTI), stress-induced leakage currents (SILC)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d0282984805b8c8cf212cded09fb895
https://doi.org/10.1109/iedm.2014.7047093
https://doi.org/10.1109/iedm.2014.7047093
Publikováno v:
Current Pharmaceutical Design. 11:4117-4124
In most mammals purine degradation ultimately leads to the formation of allantoin. Humans lack the enzyme uricase, which catalyzes the conversion of uric acid to allantoin. The resulting higher level of uric acid has been hypothesized to play a role
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f0556f4ac84351dcd0d17ad12d4af40
https://doi.org/10.2174/138161205774913318
https://doi.org/10.2174/138161205774913318
Akademický článek
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Autor:
C. Kernstock, Hans Reisinger, B. Kaczer, G. Rott, Gerhard Rzepa, Tibor Grasser, Markus Karner, K. Rott, Wolfgang Goes
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Given the rapid recovery of the degradation induced by bias-temperature stress, the understanding and modeling of NBTI has been a challenge for nearly half a century. With the introduction of the time-dependent defect spectroscopy (TDDS), NBTI could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccebebab14eb09a87dd96c851b942e2
https://doi.org/10.1109/sispad.2014.6931568
https://doi.org/10.1109/sispad.2014.6931568
Publikováno v:
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84de98a37a451bdf1a59de84f7c0bb54
https://doi.org/10.1109/ipfa.2014.6898194
https://doi.org/10.1109/ipfa.2014.6898194