Zobrazeno 1 - 10
of 29
pro vyhledávání: '"K. Remack"'
Autor:
S. R. Summerfelt, R. Bailey, P. Staubs, J. Rodriguez, K. Boku, Theodore S. Moise, M. Arendt, Gregory B. Shinn, K. Remack, J. Eliason, K. R. Udayakumar
Publikováno v:
Japanese Journal of Applied Physics. 47:2710-2713
Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a6a3da919259b79bc3190c7047d123
https://doi.org/10.1143/jjap.47.2710
https://doi.org/10.1143/jjap.47.2710
Autor:
Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 46:2180-2183
We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89d8da37c116c0c147b55c25bcf4ae62
https://doi.org/10.1143/jjap.46.2180
https://doi.org/10.1143/jjap.46.2180
Autor:
S. R. Summerfelt, Theodore S. Moise, K. R. Udayakumar, Sanjeev Aggarwal, Hugh P. McAdams, B. Rathsack, Francis G. Celii, J. Rodriguez, Lindsey H. Hall, L. Matz, J. S. Martin, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 45:3202-3206
High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e7d2c32233b3f3010b8890f4f15bdf3
https://doi.org/10.1143/jjap.45.3202
https://doi.org/10.1143/jjap.45.3202
Autor:
R. Bailey, K. Boku, Kelly J. Taylor, John A. Rodriguez, Francis G. Celii, Joe W. McPherson, Glen R. Fox, Theodore S. Moise, Hugh P. McAdams, M. Depner, Sanjeev Aggarwal, K. Remack, Lindsey H. Hall, K. R. Udayakumar, S. Martin, Scott R. Summerfelt
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:436-449
We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a76489e2600454801bf37a125562340
https://doi.org/10.1109/tdmr.2004.837210
https://doi.org/10.1109/tdmr.2004.837210
Autor:
Yunchen Qiu, R. Acklin, Xiao-Hong Du, K. Remack, Anand Seshadri, John Y. Fong, D. Liu, W.F. Kraus, J. Roscher, Terence G. W. Blake, Scott R. Summerfelt, S. Natarajan, Sudhir K. Madan, J. Eliason, Ning Qian, J. Rodriguez, Theodore S. Moise, Hugh P. McAdams
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:667-677
A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e72f99594fe2fa51ee0ec491ad866f3
https://doi.org/10.1109/jssc.2004.825241
https://doi.org/10.1109/jssc.2004.825241
Autor:
K. Remack, K. R. Udayakumar, K. Boku, Scott R. Summerfelt, J. Rodriguez-Latorre, J. Groat, J. Eliason, F. Chu, M. Depner, Theodore S. Moise, J. Gertas, C. Zhou, L. Wang, J. Rodriguez, D. Kim
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
We present results of a comprehensive reliability evaluation of a 2T–2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4×1013 cycles and data retention equivalent of 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250fdd45e5c20164775ca64a9e286514
https://doi.org/10.1109/irps.2010.5488738
https://doi.org/10.1109/irps.2010.5488738
Autor:
K. R. Udayakumar, A. Haider, M. Depner, Theodore S. Moise, Sudhir K. Madan, K. Boku, J. Eliason, Hugh P. McAdams, R. Bailey, Gregory B. Shinn, K. Remack, D. Kim, P. Staubs, John A. Rodriguez, Scott R. Summerfelt, J. Gertas
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d54d34dec58803718212347155c938e
https://doi.org/10.1109/isaf.2008.4693960
https://doi.org/10.1109/isaf.2008.4693960
Autor:
M. Depner, D. Kim, Theodore S. Moise, Scott R. Summerfelt, Hugh P. McAdams, J. Eliason, J. Rodriguez, J. Gertas, P. Staubs, Sudhir K. Madan, K. Remack, Gregory B. Shinn, K. R. Udayakumar, K. Boku, R. Bailey
Publikováno v:
2007 Non-Volatile Memory Technology Symposium.
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times1012 cycles shows no degradation of switched polarization. 10 year, 85degC, dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cfa0ce9d209fb1d5cdfd448bef95d2a
https://doi.org/10.1109/nvmt.2007.4389948
https://doi.org/10.1109/nvmt.2007.4389948
Autor:
R. Bailey, J. Gertas, J. Rodriguez, M. Depner, Theodore S. Moise, D. Kim, Hugh P. McAdams, K. R. Udayakumar, J. Eliason, P. Staubs, K. Boku, Sudhir K. Madan, J. Groat, K. Remack, Scott R. Summerfelt
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low numbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3cf64712ec574ba9145ef0a6eb31ebd
https://doi.org/10.1109/isaf.2007.4393151
https://doi.org/10.1109/isaf.2007.4393151
Autor:
Gregory B. Shinn, R. Bailey, Theodore S. Moise, J. Rodriguez, K. Remack, S. R. Summerfelt, K. Boku, M. Arendt, P. Staubs, J. Eliason, J. Gertas, K. R. Udayakumar
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e571b762a2dae7e542738f5b8e97503
https://doi.org/10.7567/ssdm.2007.j-8-3
https://doi.org/10.7567/ssdm.2007.j-8-3