Zobrazeno 1 - 10
of 198
pro vyhledávání: '"K. Regiński"'
Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing
Autor:
Adam Korczyc, Joanna Branas, Agata Jasik, Jacek Ratajczak, Paweł Kozłowski, K. Regiński, Krzysztof Czuba, Krzysztof Chmielewski
Publikováno v:
Materials
Volume 14
Issue 21
Materials, Vol 14, Iss 6269, p 6269 (2021)
Volume 14
Issue 21
Materials, Vol 14, Iss 6269, p 6269 (2021)
Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects of the fabrication technology of micrometer-sized indium bumps with a smooth surface morpho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b393201d718c4106cfba4aeb772d29ff
https://pubmed.ncbi.nlm.nih.gov/34771804
https://pubmed.ncbi.nlm.nih.gov/34771804
Autor:
Dorota Pierścińska, Iwona Sankowska, Rafal Jakiela, K. Regiński, Krzysztof Czuba, Jacek Ratajczak, Agata Jasik, Dariusz Smoczyński, Andrzej Wawro
Publikováno v:
Applied Physics A. 124
A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As2 dimers on the surface. Prior to the initiation of the GaSb growth tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96251f31c382827faa39f540802fcfc3
https://doi.org/10.1007/s00339-018-1931-8
https://doi.org/10.1007/s00339-018-1931-8
Autor:
Lukasz Zinkiewicz, A. Wójcik-Jedlińska, Piotr Wasylczyk, Krzysztof Hejduk, Agata Jasik, K. Regiński, Maciej Dems, Pawel Wnuk
Publikováno v:
IEEE Photonics Technology Letters. 26:14-17
We have developed a tunable semiconductor double-chirped mirror with high negative dispersion grown by molecular beam epitaxy. The simplified numerical plane-wave reflection transfer method was applied to design the dispersive mirror structure. The m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff901d90e29f92264fb1df64c7d245f2
https://doi.org/10.1109/lpt.2013.2288457
https://doi.org/10.1109/lpt.2013.2288457
Autor:
Piotr Wasylczyk, A. Wójcik-Jedlińska, Pawel Wnuk, Krzysztof Hejduk, K. Regiński, Łukasz Zinkiewicz, Maciej Dems, Agata Jasik
Publikováno v:
Applied Physics B. 116:141-146
We report on the development of semiconductor double-chirped mirrors with the group delay dispersion of −3,800 ± 100 fs2 in the wavelength range between 1,058 ÷ 1,064 nm and reflectivity of 99.1 %. The simplified plane-wave reflection transfer me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7098fee90f0a837171812e37d922d8aa
https://doi.org/10.1007/s00340-013-5662-4
https://doi.org/10.1007/s00340-013-5662-4
Autor:
A. Wójcik-Jedlińska, Krzysztof Hejduk, K. Regiński, Pawel Wnuk, Agata Jasik, Łukasz Zinkiewicz, Maciej Dems, Piotr Wasylczyk
Publikováno v:
Applied Physics B. 122
Genetic algorithm was applied for optimization of dispersion properties in semiconductor Bragg reflectors for applications in femtosecond lasers. Broadband, large negative group-delay dispersion was achieved in the optimized design: The group-delay d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c94f5e75a70bdf34f0c8742c319c0d7d
https://doi.org/10.1007/s00340-016-6540-7
https://doi.org/10.1007/s00340-016-6540-7
Publikováno v:
Applied Physics A. 108:491-496
We have studied the influence of the beryllium doping on strain in the II-type InAs/GaSb superlattices (SLs) by means of high-resolution X-ray diffraction (HRXRD). Three analyzed superlattices were grown by molecular beam epitaxy. One of the examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::311b0d090000d2150f01a339289c7bc5
https://doi.org/10.1007/s00339-012-6919-1
https://doi.org/10.1007/s00339-012-6919-1
Autor:
P. Gutowski, K. Regiński, A. Trajnerowicz, Maciej Bugajski, P. Karbownik, Emilia Pruszyńska-Karbownik
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:43-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6fee485ffe8a4f9caf13dd1987d93ae
https://doi.org/10.15199/ele-2014-191
https://doi.org/10.15199/ele-2014-191
Publikováno v:
Vacuum. 82:947-950
We investigate selected problems of the molecular beam epitaxy (MBE) technology of fabrication of semiconductor saturable absorbers, which are the main parts of broadband saturable absorber mirrors. These mirrors are designed for mode locking of soli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712834d3edc8866a1aaefa2b1db5fb5f
https://doi.org/10.1016/j.vacuum.2008.01.002
https://doi.org/10.1016/j.vacuum.2008.01.002
Publikováno v:
physica status solidi (c). 2:1943-1947
Partially relaxed InP/InAlAs/InGaAs heterostructures, grown by molecular beam epitaxy under tensile and compressive misfit stress, have been investigated by means of high-resolution X-ray diffractometry and spectroscopic ellipsometry. Additionally, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54bae708b70cdac92082e538d90e0593
https://doi.org/10.1002/pssc.200460530
https://doi.org/10.1002/pssc.200460530
Publikováno v:
Materials Science and Engineering: B. 110:79-86
At low temperatures, ionized impurities are the dominant scattering mechanism limiting carrier mobilities in most semiconductors. Calculations of ionized impurity scattering have usually been based on the assumption that the ions scatter independentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2691fd46b67473e6f70058f9c813391
https://doi.org/10.1016/j.mseb.2004.03.009
https://doi.org/10.1016/j.mseb.2004.03.009