Zobrazeno 1 - 10
of 87
pro vyhledávání: '"K. Raleva"'
Autor:
Zhong-Jie Jiang, Dayong Zhou, Weiheng Chen, Ru Qiao, K. Raleva, Snežana Papović, Zhongqing Jiang, Xiaoping Chen
Publikováno v:
Carbon. 187:230-240
Here, a simple, economical one-step doping strategy is adopted to prepare N, S co-doped graphene hollow spheres (NSGHS). The NSGHS exhibits remarkable oxygen-reduction-reaction (ORR) activity with a high half-wave potential (E1/2) of 0.847 V vs. RHE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f5dbed0b6642ef1daa4779e1e0a3db7
https://doi.org/10.1016/j.carbon.2021.11.020
https://doi.org/10.1016/j.carbon.2021.11.020
Publikováno v:
2022 IEEE Latin American Electron Devices Conference (LAEDC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f030f67f341010169cfdbf3c35b067c
https://doi.org/10.1109/laedc54796.2022.9908207
https://doi.org/10.1109/laedc54796.2022.9908207
Publikováno v:
IEEE Nanotechnology Magazine. 13:6-17
For many years, the computer industry has relied on steady progress in the exponential rate of scaling MOSFETs in integrated circuits. The usual expectation, based on Moore's law, is that the number of transistors able to be packed on a chip doubles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5abeea4840e04858e46da2475b1aa0c
https://doi.org/10.1109/mnano.2019.2916114
https://doi.org/10.1109/mnano.2019.2916114
Autor:
Rufu Hu, Hongbo Ji, Quan Yuan, Yaobo Wu, Yingping Ji, Yuezhuan Liu, K. Raleva, Tao Wang, Xiaoping Chen, Weigong Zheng, Ling Li
Publikováno v:
Journal of Electrochemical Energy Conversion and Storage. 18
Understanding the mechanical, thermal, and electrical properties of prismatic lithium-ion batteries (LIBs) is vital to battery safety design, which is key to electric vehicle safety. This study investigated prismatic LIBs subjected to multiple-positi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb3e51e10e8bf5ab5d8fb28ea789caf
https://doi.org/10.1115/1.4049237
https://doi.org/10.1115/1.4049237
Akademický článek
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Publikováno v:
Modeling Self-Heating Effects in Nanoscale Devices ISBN: 9781681741239
Modeling Self-Heating Effects in Nanoscale Devices
Modeling Self-Heating Effects in Nanoscale Devices
Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edbc9c2116fb42ebc2719f191f49f9e3
https://doi.org/10.1088/978-1-6817-4123-9ch2
https://doi.org/10.1088/978-1-6817-4123-9ch2
Publikováno v:
Modeling Self-Heating Effects in Nanoscale Devices ISBN: 9781681741239
Modeling Self-Heating Effects in Nanoscale Devices
Modeling Self-Heating Effects in Nanoscale Devices
Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae5f385bb075f5ea07439f51601f7e8b
https://doi.org/10.1088/978-1-6817-4123-9ch3
https://doi.org/10.1088/978-1-6817-4123-9ch3
Autor:
Dragica Vasileska, K. Raleva
Publikováno v:
Journal of Computational Electronics. 12:601-610
In this review paper we want to emphasize the importance of having accurate thermal conductivity models for modeling self-heating effects on the device level. For that purpose, we first consider thin silicon films and calculate (using Sondheimer's ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0120a94a84f358d6171ee5248a13186d
https://doi.org/10.1007/s10825-013-0520-5
https://doi.org/10.1007/s10825-013-0520-5
Publikováno v:
Journal of Computational Electronics. 11:238-248
In this paper we summarize 6 years of work on modeling self-heating effects in nano-scale devices at Arizona State University (ASU). We first describe the key features of the electro-thermal Monte Carlo device simulator (the two-dimensional and the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71d53c109e543a6e73dd0561d64f82b
https://doi.org/10.1007/s10825-012-0404-0
https://doi.org/10.1007/s10825-012-0404-0