Zobrazeno 1 - 10
of 90
pro vyhledávání: '"K. Rakennus"'
Autor:
Sérgio L. Morelhão, K. Rakennus, Lisandro Pavie Cardoso, M. A. Hayashi, Ferenc Riesz, L. H. Avanci, Teemu Hakkarainen
Publikováno v:
Journal of Crystal Growth. 188:220-224
InP/GaAs(1 0 0) heterostructures grown by gas-source molecular-beam epitaxy were analyzed using three-beam bragg-surface diffraction (BSD) of the X-ray multiple diffraction (MD) phenomenon. The angular MD condition is scanned by varying both, the ω
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a2d34ba796fbb20a40693f068d06b0
https://doi.org/10.1016/s0022-0248(98)00074-8
https://doi.org/10.1016/s0022-0248(98)00074-8
Publikováno v:
Materials Science and Engineering: B. 51:18-21
Optical properties of the first fully monolithic molecular beam epitaxy (MBE) grown II–VI microcavity light emitting diode (MCLED) structure emitting at 502 nm are studied. A CdZnSe quantum well is placed in a ZnSSe λ-cavity between MgZnSSe/ZnSSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2c96471633bed8575164c062147f59
https://doi.org/10.1016/s0921-5107(97)00221-3
https://doi.org/10.1016/s0921-5107(97)00221-3
Publikováno v:
Scopus-Elsevier
The effect of proximity-cap rapid thermal annealing on the surface morphology of (100) InP epitaxial layers grown on GaAs substrates is studied by atomic force microscopy. Only small roughening was found beside the macroscopic thermal etch pits up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2dc81ead39b5afc96063a32991a6b572
https://doi.org/10.1063/1.366733
https://doi.org/10.1063/1.366733
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 119:457-462
Ion backscattering and foil transmission methods have been used to determine the energy loss of 0.3–2.5 MeV 1H and 4He ions in crystalline bulk GaAs and thin foil GaAs grown by molecular beam epitaxy (MBE). The self-supporting GaAs sample foil was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8465facbff3a076b910dff475a2a5172
https://doi.org/10.1016/s0168-583x(96)00629-5
https://doi.org/10.1016/s0168-583x(96)00629-5
Identification of the Native Vacancy Defects in Both Sublattices ofZnSxSe1−xby Positron Annihilation
Autor:
Arto Salokatve, Petteri Uusimaa, Kimmo Saarinen, K. Skog, K. Rakennus, M. Pessa, P. Hautojärvi, T. Laine, Jari Mäkinen
Publikováno v:
Physical Review Letters. 77:3407-3410
We show how positron annihilation can distinguish vacancies in the different sublattices of a binary compound by performing experiments in ${\mathrm{ZnS}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$ layers. We identify the Se vacancies $({V}_{\mathrm{Se}})$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4fae8c95ad909459146c4acddd93e0
https://doi.org/10.1103/physrevlett.77.3407
https://doi.org/10.1103/physrevlett.77.3407
Autor:
Petteri Uusimaa, J. Nappi, Markus Pessa, John Hegarty, J. P. Doran, Arto Salokatve, K. Rakennus, James O'Gorman, T. Aherne
Publikováno v:
Journal of Crystal Growth. 159:628-631
Quarter wavelength distributed Bragg reflectors (DBRs) of MnZnSSe ZnSSe (referred to as Mn-DBR) and MgZnSSe ZnSSe (Mg-DBR) have been grown by molecular beam epitaxy for the blue-green spectral region. In particular, a continuous in situ optical refle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016bebfcf35e54f8aed414c110f0066c
https://doi.org/10.1016/0022-0248(95)00883-7
https://doi.org/10.1016/0022-0248(95)00883-7
Publikováno v:
physica status solidi (b). 187:337-346
The possibilities of developing ZnSe blue-green lasers with new materials and layer structures are studied. In particular, it is considered: (i) the use of an „inverted” laser structure, n-on-p configuration, having p-type barrier reduction layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b83aea37c65618df3fc7f4f7988ea8ab
https://doi.org/10.1002/pssb.2221870211
https://doi.org/10.1002/pssb.2221870211
Publikováno v:
Rakennus, K, Uusimaa, P, Likonen, J, Savolainen, P & Pessa, M 1995, ' Growth and doping of II-VI materials for blue/green lasers ', Materials Science Forum, vol. 182-184, pp. 43-46 . https://doi.org/10.4028/www.scientific.net/MSF.182-184.43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c8479c6d9a179dec5ca154b64aa7130
https://cris.vtt.fi/en/publications/ff2ca6f0-f060-496b-98c3-05cce6e018d6
https://cris.vtt.fi/en/publications/ff2ca6f0-f060-496b-98c3-05cce6e018d6
Publikováno v:
Physica Scripta. :177-180
We have adopted a new approach in an attempt to improve the present-day technology in preparing blue/green ZnSe light emitters. This approach includes growth of layer structure with n-on-p configuration and the use of barrier reduction layers in betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321bbb4707fa626c92005c22659b75ef
https://doi.org/10.1088/0031-8949/1994/t54/044
https://doi.org/10.1088/0031-8949/1994/t54/044
Autor:
J. Lammasniemi, K. Rakennus
Publikováno v:
Solar Energy Materials and Solar Cells. 30:301-307
Effects of annealing on crystal structure and device characteristics of InP solar cells on GaAs substrates were studied. Two different methods, thermally cycled annealing during the growth, and rapid thermal annealing after the growth, were applied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49226bf9b0cab1f270a35e06a9103093
https://doi.org/10.1016/0927-0248(93)90108-f
https://doi.org/10.1016/0927-0248(93)90108-f