Výsledky vyhledávání - "K. R. Udayakumar"

Programming-Pulse Dependence of Ferroelectric Partial Polarization: Insights From a Comparative Study of PZT and HZO Capacitors

Autor: Theodore S. Moise, K. R. Udayakumar, Wan Sik Hwang, Alan Seabaugh, Pratyush Pandey

Publikováno v: IEEE Transactions on Electron Devices. 67:4482-4487

The programming of partial polarization in ferroelectric (FE) hafnium zirconate (HZO) capacitors is shown to depend on the delay between FE reset and the polarization write pulse (delay-before-write), revealing a subtle history dependence. Programmin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::26d15e11bee68e1d66ce2f6c0cfb86e7
https://doi.org/10.1109/ted.2020.3015794

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EXPERIMENTAL INVESTİGATIONS ON EMISSIONS CHARACTERISTICS OF A VARIABLE COMPRESSİON RATIO ENGINE OPERATED ON DUAL FUEL MODE USING DIESEL AND BIODIESEL (OBTAINED FROM COTTON SEED OIL AND RICE BRAN OIL)

Autor: Sundar. K, R. Udayakumar, Shashank Khurana

Publikováno v: Journal of Mechanical Engineering Research and Developments, Vol 41, Iss 3, Pp 59-66 (2018)

The global consumption of fossil fuels is increasing rapidly, and it affects the environment through greenhouse gases causing health hazards. Biodiesel has a great potential to reduce environmental pollution as an alternative fuel for diesel engines.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab9aacb5733a200b2856376ce4b8835f
https://doi.org/10.26480/jmerd.03.2018.59.66

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High Temperature Data Retention of Ferroelectric Memory on 130nm and 180nm CMOS

Autor: Theodore S. Moise, Huang-Chun Wen, T. Wang, Scott R. Summerfelt, M. Ball, John A. Rodriguez, K. R. Udayakumar, Tamer San, C. Zhou, R. Bailey, M. Wiegand, T. Graf

Publikováno v: 2016 IEEE 8th International Memory Workshop (IMW).

Systematic evaluation of ferroelectric memory (FRAM) data retention mechanisms under high temperature exposure are reported. The FRAM devices are embedded on ultra-low power, analog-enhanced 130nm and 180nm CMOS technologies. Capability of the FRAM t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b99268ac240cb5b220873c75121edb74
https://doi.org/10.1109/imw.2016.7495274

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Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

Autor: S. R. Summerfelt, R. Bailey, P. Staubs, J. Rodriguez, K. Boku, Theodore S. Moise, M. Arendt, Gregory B. Shinn, K. Remack, J. Eliason, K. R. Udayakumar

Publikováno v: Japanese Journal of Applied Physics. 47:2710-2713

Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leak

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a6a3da919259b79bc3190c7047d123
https://doi.org/10.1143/jjap.47.2710

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Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

Autor: Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku

Publikováno v: Japanese Journal of Applied Physics. 46:2180-2183

We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89d8da37c116c0c147b55c25bcf4ae62
https://doi.org/10.1143/jjap.46.2180

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Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Autor: S. R. Summerfelt, Theodore S. Moise, K. R. Udayakumar, Sanjeev Aggarwal, Hugh P. McAdams, B. Rathsack, Francis G. Celii, J. Rodriguez, Lindsey H. Hall, L. Matz, J. S. Martin, K. Remack, K. Boku

Publikováno v: Japanese Journal of Applied Physics. 45:3202-3206

High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e7d2c32233b3f3010b8890f4f15bdf3
https://doi.org/10.1143/jjap.45.3202

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Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

Autor: R. Bailey, K. Boku, Kelly J. Taylor, John A. Rodriguez, Francis G. Celii, Joe W. McPherson, Glen R. Fox, Theodore S. Moise, Hugh P. McAdams, M. Depner, Sanjeev Aggarwal, K. Remack, Lindsey H. Hall, K. R. Udayakumar, S. Martin, Scott R. Summerfelt

Publikováno v: IEEE Transactions on Device and Materials Reliability. 4:436-449

We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a76489e2600454801bf37a125562340
https://doi.org/10.1109/tdmr.2004.837210

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Plasma Etch Processes for Embedded FRAM Integration

Autor: Francis G. Celii, Mahesh Thakre, Mark K. Gay, Scott R. Summerfelt, Sanjeev Aggarwal, J. Scott Martin, Lindsey Hall, K. R. Udayakumar, Ted S. Moise

Publikováno v: Integrated Ferroelectrics. 53:269-277

We describe the etch processes used for integration of embedded ferroelectric random access memory (FRAM) within a standard CMOS logic flow. The ferroelectric module is inserted following front-end contact formation and prior to backend integration u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf5e73b415e71393e5bd37f5080354d6
https://doi.org/10.1080/10584580390258183

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Enhanced Infrared Absorption by Ferroelectric-Conducting Oxide Thin-Film Structures

Autor: Kevin L. Soch, Howard R. Beratan, K. R. Udayakumar, C. W. Tipton, W. A. Beck, D. N. Robertson, William W. Clark, Charles M. Hanson, Robert C. Hoffman

Publikováno v: Integrated Ferroelectrics. 43:1-18

Infrared absorbing free-standing bridge structures are anticipated to be used in the next generation of ferroelectric uncooled infrared detectors. These structures will consist of resonant cavities with an absorbing bridge element, which contains the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eba2e044ac505684a58a039218bee153
https://doi.org/10.1080/10584580212365

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Tomorrow's surgery: Micromotors and microrobots for minimally invasive procedures

Autor: James McLurkin, David S. Barrett, D. L. Franck, A. N. Shectman, K. R. Udayakumar, Anita M. Flynn

Publikováno v: Minimally Invasive Therapy & Allied Technologies. 7:343-352

SummarySurgical procedures have changed radically over the last few years due to the arrival of new technology. What will technology bring us in the future? This paper examines a few of the forces whose timing is causing new ideas to congeal from the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cc6d90900d99d899af3558c098abb94
https://doi.org/10.3109/13645709809152878

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