Zobrazeno 1 - 10
of 10
pro vyhledávání: '"K. R. Olsson"'
Autor:
J. W. Bangs, K. Rybnicek, Kelly A. Jones, K. R. Olsson, Sean F. Harris, M. F. Vilela, K. D. Smith, D. D. Lofgreen
Publikováno v:
Journal of Electronic Materials. 43:3018-3024
There is a well-known direct negative correlation between dislocation density and optoelectronic device performance. Reduction in detector noise associated with dislocations is an important target for improvement of mercury cadmium telluride (Hg1−x
Publikováno v:
Journal of Electronic Materials. 43:2991-2997
HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and microvoid defects, do not contain a polycrystalline core and, therefore, do not offer a good contrast for o
Autor:
Scott M. Johnson, Jeffrey M. Peterson, K. Rybnicek, K. R. Olsson, J. W. Bangs, D. D. Lofgreen, M. F. Vilela, David R. Rhiger, Elyse Norton, C. W. Fulk
Publikováno v:
Journal of Electronic Materials. 42:3231-3238
Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive cadmium zinc telluride (CdZnTe) substrates. In t
Publikováno v:
Journal of Electronic Materials. 41:2937-2942
In this work, spectroscopic ellipsometry (SE) is demonstrated as a technique to calibrate growth temperature measurement devices (thermocouples and pyrometers) prior to real mercury cadmium telluride (HgCdTe) growth. A pyrometer is used to control th
Autor:
K. R. Olsson, Borys P. Kolasa, Edward P. Smith, A. M. Ramirez, K. D. Smith, Justin Gordon Adams Wehner, M. F. Vilela, G. M. Venzor
Publikováno v:
Journal of Electronic Materials. 40:1840-1846
This work investigates the use of photon trapping structures in HgCdTe detectors for use in mid-wavelength infrared (MWIR) detectors. Model results based on finite-difference time-domain electromagnetic simulation and a finite-element model of electr
Autor:
K. R. Olsson, E. A. Patten, D. D. Lofgreen, J. W. Bangs, Jeffrey M. Peterson, Scott M. Johnson, Edward P. Smith, W. A. Radford, J. A. Franklin, Leon Melkonian, M. Reddy, T. Vang, M. F. Vilela
Publikováno v:
Journal of Electronic Materials. 40:1706-1716
This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm × 4 c
Autor:
T. Vang, Scott M. Johnson, K. R. Olsson, Jeffrey M. Peterson, M. Reddy, J. J. Franklin, D. D. Lofgreen, M. F. Vilela
Publikováno v:
physica status solidi c. 7:2518-2521
In this paper, we show the power of using molecular beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels, or switching doping types are easily performed. It is shown
Autor:
Scott M. Johnson, D. D. Lofgreen, E. A. Patten, P. M. Goetz, K. R. Olsson, M. F. Vilela, J. G. Vodicka
Publikováno v:
Journal of Electronic Materials. 39:2215-2219
HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive CdZnTe substrates. The goal of this work is to evaluate the use of HgCdTe/Si for mid-w
Autor:
D. D. Lofgreen, A. A. Buell, Scott M. Johnson, K. R. Olsson, Sean F. Harris, Robert E. Kvaas, M. D. Newton, M. F. Vilela
Publikováno v:
Journal of Electronic Materials. 38:1755-1763
In this paper, we show the versatility of using molecular-beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels or switching doping types are easily performed. It is
Autor:
M. F. Vilela, G. M. Venzor, Justin Gordon Adams Wehner, K. D. Smith, A. M. Ramirez, K. R. Olsson, J. E. Randolph, Roger W. Graham, Edward P. Smith
Publikováno v:
SPIE Proceedings.
This paper investigates arrays of HgCdTe photon trapping detectors. Performance of volume reduced single mesas is compared to volume reduced photon trap detectors. Good agreement with model trends is observed. Photon trap detectors exhibit improved p