Zobrazeno 1 - 10
of 11
pro vyhledávání: '"K. R. Milkove"'
Autor:
Janusz J. Nowak, K. R. Milkove, Sivananda K. Kanakasabapathy, William J. Gallagher, G. Wright, Daniel C. Worledge, Solomon Assefa, Michael C. Gaidis, P. L. Trouilloud, Yingdong Lu, Eugene J. O'Sullivan
Publikováno v:
IBM Journal of Research and Development. 50:41-54
The implementation of magnetic random access memory (MRAM) hinges on complex magnetic film stacks and several critical steps in back-end-of-line (BEOL) processing. Although intended for use in conjunction with silicon CMOS front-end device drivers, M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a085227f654d910cb033ae3ff43bbe74
https://doi.org/10.1147/rd.501.0041
https://doi.org/10.1147/rd.501.0041
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1483-1488
The influence of Ar addition to a Cl2/CF4 dry etch gas mix on the etch character of patterned Pt films is evaluated. The incremental substitution of Ar for Cl2 is shown to be detrimental to the Pt etch process by enhancing the severity of redeposits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::510b935b2b309b862efc2dc1aace8ecb
https://doi.org/10.1116/1.581174
https://doi.org/10.1116/1.581174
Autor:
C. X. Wang, K. R. Milkove
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:596-603
An investigation was undertaken to characterize the time progression of the Pt etch process during the dry etching (DE) of fence-free patterned structures. The goal of this study was to clarify the mechanism of fence-free Pt etching. In particular an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b66a88400a32751eec3510042e91f1c
https://doi.org/10.1116/1.580690
https://doi.org/10.1116/1.580690
Autor:
David W. Abraham, E. Gow, Stuart S. P. Parkin, E. Galligan, K. R. Milkove, G. Wright, Mahesh G. Samant, J. DeBrosse, See-Hun Yang, Daniel C. Worledge, T. Maffit, Stephen L. Brown, William J. Gallagher, S. Kanakasabapathy, Michael C. Gaidis, Christian Kaiser, Janusz J. Nowak, Yu Lu, Brian M. Hughes, Eugene J. O'Sullivan, Mark C. H. Lamorey, Solomon Assefa, R. P. Robertazzi, J. Hummel, P. L. Trouilloud, P. M. Rice
Publikováno v:
ResearcherID
MRAM technology offers an attractive combination of performance, density, low power, non-volatility, and write endurance. While first stand-alone MRAM products appear poised for introduction, major technology advances are also being reported. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f22e29084f00207aedf2b23627d3f2dd
https://doi.org/10.1109/vtsa.2005.1497086
https://doi.org/10.1109/vtsa.2005.1497086
Publikováno v:
Applied Physics Letters. 67:3921-3923
We have measured the resonant tunneling current–voltage I(V) characteristics of strained p‐Si/Si1−xGex double‐barrier microstructures ranging from 1.0 to 0.1 μm in lateral extent. The bias spacing between resonant current peaks in the I(V) r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d9ce74bfdaa08493591ed2ab26748d
https://doi.org/10.1063/1.115318
https://doi.org/10.1063/1.115318
Autor:
Yuan Taur, R. Viswanathan, M. P. Manny, Shalom J. Wind, R. M. Sicina, Chenming Hu, S. Cohen, R. A. Roy, Andrew Pomerene, J.J. Bucchignano, Y.-J. Mii, K. R. Milkove, Y. H. Lee, W. Chen, J. W. Stiebritz
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2688
We explore the fabrication of complementary metal–oxide–semiconductor (CMOS) devices and circuits with a critical dimension of 100 nm and below using a variety of lithographic, processing, materials, and device design innovations. Device design p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c0228250a532f9862500e58fc37545
https://doi.org/10.1116/1.588050
https://doi.org/10.1116/1.588050
Publikováno v:
Le Journal de Physique Colloques. 46:C4-71
Recapitulation des resultats de l'application des techniques de diffraction a l'etude de la structure atomique des joints de grains
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0392a95285cdc619030f80185cd9f7fd
https://doi.org/10.1051/jphyscol:1985406
https://doi.org/10.1051/jphyscol:1985406
Autor:
S. L. Sass, K. R. Milkove
Publikováno v:
Review of Scientific Instruments. 57:2812-2816
An ultrahigh‐vacuum apparatus for the preparation of thin metal bicrystals containing controlled grain boundaries at their midplane is described. The deposition of the thin epitaxial single‐crystal films and their hot pressing together to produce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b93f7917b1d4a0ea2401651e32024aa3
https://doi.org/10.1063/1.1139049
https://doi.org/10.1063/1.1139049
Publikováno v:
Solid State Communications. 19:1095-1097
New perspective on superconducting anisotropy and multiple energy gaps: direct experimental evidence shows that widely accepted anisotropy and multiple energy gap interpretations of tunneling data are consistent with a voltage divider model and may n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec4a36a44af229f27677245a82310af5
https://doi.org/10.1016/0038-1098(76)90106-x
https://doi.org/10.1016/0038-1098(76)90106-x
Publikováno v:
MRS Proceedings. 41
The application of diffraction techniques to study the atomic structure of grain boundaries is reviewed. The determination of the projected structure of a large angle [001] twist boundary is described. The influence of f.c.c. metal type and bonding t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a1628722849328dad92496ec871774c
https://doi.org/10.1557/proc-41-195
https://doi.org/10.1557/proc-41-195