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Autor:
Alexander Gottwald, Frank Scholze, Vahid Mohammadi, Lin Qi, Wiebe de Boer, K. R. M. Mok, Udo Kroth, T.L.M. Scholtes, Negin Golshani, Lis K. Nanver, Amir Sammak
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:306-316
This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07252f1920d8570c10297eb91cfe6502
https://doi.org/10.1109/jstqe.2014.2319582
https://doi.org/10.1109/jstqe.2014.2319582
