Zobrazeno 1 - 10
of 31
pro vyhledávání: '"K. R. Evans"'
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022504-022504-7 (2019)
Halide vapor phase epitaxy was used to grow homoepitaxial films of β-Ga2O3 on bulk (010) crystals and heteroepitaxial films of α-Ga2O3 on c-plane sapphire substrates. The β-Ga2O3 substrates were prepared prior to growth to remove sub-surface damag
Externí odkaz:
https://doaj.org/article/c3d66d556a2148d4a3f782529bea6179
Autor:
Olga Theou, Paula R Williamson, Matteo Cesari, Darryl B. Rolfson, H. E. Eriksen, I. Araujo de Carvalho, Beverley Shea, Jeanette Prorok, George A. Heckman, Samir K. Sinha, G. Shaw, Lindsay M. K. Wallace, Bruno Vellas, Andrew Clegg, V. Valdiglesias, Nicola Veronese, K. R. Evans, John Muscedere, B. Laffon, J. Lynn, John P. Hirdes, Kenneth Rockwood, P. Tugwell, L. Rodrigues Mañas, Finbarr C. Martin, Jonathan Afilalo, Perry Kim
Publikováno v:
The Journal of frailtyaging. 9(1)
With aging populations around the world, frailty is becoming more prevalent increasing the need for health systems and social systems to deliver optimal evidence based care. However, in spite of the growing number of frailty publications, high-qualit
Autor:
Michael Dudley, Balaji Raghothamachar, Kenneth E. Morgan, K. R. Evans, L. J. Schowalter, Glen A. Slack, S. B. Schujman, J. B. Whitlock
Publikováno v:
physica status solidi (c). :1997-2000
Aluminum nitride (AlN) is a promising substrate material for emerging wide-bandgap electronic and opto-electronic devices. Although existing manufacturing technology is less mature than for sapphire and silicon carbide substrates, aluminum nitride ha
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 14:313-322
Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional profiles fabricated by molecular be
Publikováno v:
Journal of the Geological Society. 158:295-308
New isotopic ages and a fresh understanding of stratigraphic relations among siliciclastic strata in the Pensacola Mountains along the northern margin of the East Antarctic craton result in removal of some constraints for the Proterozoic break-up of
Publikováno v:
Journal of Applied Physics. 85:8235-8241
Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from th
Publikováno v:
Journal of Crystal Growth. :211-215
In situ desorption mass spectrometry studies (DMS) of AlGaAs GaAs molecular beam epitaxy (MBE) at high substrate temperatures reveals a rich transient behavior in the Ga desorption signal during the formation of the AlGaAs-on-GaAs interface. In this
Publikováno v:
Applied Physics Letters. 79:949-951
Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shap
Publikováno v:
Applied Physics Letters. 70:3143-3145
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior at AlGaAs/GaAs heterointerfaces during growth by molecular beam epitaxy. The transients in Ga desorption rate upon opening/closing the Al shutter arise due to both
Publikováno v:
Journal of cultural diversity. 7(2)
The purpose of this study was to investigate the lived experiences of female victims of domestic violence who also identified themselves as victims of physical abuse as children. There have been numerous studies of identifying perpetrators of violenc