Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K. R. Ajayan"'
Autor:
T. N. Shilpa, K. R. Ajayan
Publikováno v:
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS, SIGNALS AND SYSTEMS 2019.
Silicon based semiconductor technology has gained a lot of attention in electronics industries for decades. Nowadays it has almost reached an end, further scaling may cause critical issues such as short channel effects, leakage due to tunneling, high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a06c22009493e227d53ac018178aef
https://doi.org/10.1063/5.0004533
https://doi.org/10.1063/5.0004533
Autor:
K. R. Ajayan, Vrinda Vijayakumar
Publikováno v:
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS, SIGNALS AND SYSTEMS 2019.
Present digital circuits demanded for low power consumption with high packaging density. Now a days scaling of MOSFET devices are goes on increasing, which causes undesirable Short Channel Effects on the device parameters, it may leads to leakage cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef6962800252dff9e65088abdffa5c4
https://doi.org/10.1063/5.0006037
https://doi.org/10.1063/5.0006037
Autor:
Navakanta Bhat, K. R. Ajayan
Publikováno v:
Analog Integrated Circuits and Signal Processing. 63:321-327
This paper presents a modified design method for linear transconductor circuit in 130 nm CMOS technology to improve linearity, robustness against process induced threshold voltage variability and reduce harmonic distortion. Source follower in the ada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db73abc7420909b8b6168652610ab85f
https://doi.org/10.1007/s10470-009-9396-5
https://doi.org/10.1007/s10470-009-9396-5
Autor:
K R Ajayan, K R Jithya
Publikováno v:
2015 International Conference on Control Communication & Computing India (ICCC).
A comparitive analysis of two stage operational transconductance amplifiers(OTA) in subthreshold region with 130nm technology has been presented. Linear Transconductor with Flipped Voltage Follower(LTFVF) and Linear Transconductor Flipped Voltage Fol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88cff965ba2fd9458b6269e47dff880a
https://doi.org/10.1109/iccc.2015.7432964
https://doi.org/10.1109/iccc.2015.7432964
Autor:
K. R. Ajayan, Navakanta Bhat
Publikováno v:
16th International Workshop on Physics of Semiconductor Devices.
With the rapid scaling down of the semiconductor process technology, the process variation aware circuit design has become essential today. Several statistical models have been proposed to deal with the process variation. We propose an accurate BSIM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::860a3a4c24b6d4edccde8504b45904b5
https://doi.org/10.1117/12.926853
https://doi.org/10.1117/12.926853