Zobrazeno 1 - 10
of 75
pro vyhledávání: '"K. Rößner"'
Autor:
Johannes Koeth, Julian Scheuermann, S. Becker, Robert Weih, Martin Kamp, C. Kistner, Sven Höfling, K. Rößner
Publikováno v:
Electronics Letters. 56:1206-1208
In this work, monolithic mode-locked GaSb-based lasers at 1.7 µm emission wavelength with heterodyne measurement of the frequency comb are presented. Mode-locking operation was confirmed by measuring the optical beatnote at the round-trip frequency
Autor:
Johannes Hillbrand, S. Becker, Johannes Koeth, C. Kistner, Julian Scheuermann, Robert Weih, Martin Kamp, Benedikt Schwarz, K. Rößner
Publikováno v:
Applied Physics Letters. 116:022102
We present passive mode locking of a GaSb-based monolithic diode laser emitting at 2.2 μm with a fundamental repetition rate around 9.57 GHz. A pulse width of ∼2.4 ps is reconstructed by shifted wave intermode beat Fourier transform spectroscopy-m
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 30:159-163
We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emi
Publikováno v:
IEEE Photonics Technology Letters. 21:36-38
We have fabricated continuous-wave GaInAsSb-AlGaAsSb distributed-feedback (DFB) lasers in the 2.8- mum range, using a DFB concept requiring no subsequent overgrowth steps, by defining first-order Cr-Bragg gratings laterally to a ridge waveguide. We h
Publikováno v:
Semiconductor Science and Technology
An overview of the three competing mid-infrared semiconductor laser approaches, being diode, quantum cascade and interband cascade laser designs, is given. Limiting factors as well as unique possibilities of each approach are discussed. Several desig
Publikováno v:
Applied Physics Letters. 93:081117
We report the realization of widely tunable single-mode emitting laser diodes on the (AlGaIn)/(AsSb) material system employing binary superimposed gratings. Through this specialized concept of multifrequency selective gratings, it is possible to gene
Autor:
Alfred Forchel, M. Hümmer, Jan Misiewicz, Marcin Motyka, Robert Kudrawiec, M. Muller, T. Lehnhardt, K. Rößner
Publikováno v:
Journal of Applied Physics. 103:113514
Photoreflectance (PR) and photoluminescence (PL) have been applied to study the band structure and PL thermal quenching for Ga0.24In0.76Sb/GaSb quantum wells (QWs) of the widths varying from 10 to 21 nm. In the case of PR spectra, a strong GaSb-relat
Autor:
A. Bauer, Sven Höfling, K. Rößner, Alfred Forchel, H. Hofmann, M. Muller, T. Lehnhardt, M. Hümmer, M. Kamp
Publikováno v:
Nanotechnology. 19:235202
We report on single-mode emitting coupled cavity ridge waveguide lasers on the GaSb material system in the 2 µm spectral range using two-dimensional (2D) photonic crystals (PhCs). Eight rows of 2D PhCs lateral to the ridge waveguides act as intermed
Publikováno v:
Applied Physics Letters. 92:183508
We report on room temperature continuous wave single mode GaInAsSb-GaSb quantum well lasers emitting beyond 3μm. Quantum well strain and composition were carefully adjusted to enhance the hole confinement without increasing electron confinement in o
Autor:
Jan Misiewicz, A. Forchel, T. Lehnhardt, M. Hümmer, Marcin Motyka, K. Rößner, M. Muller, R. Kudrawiec
Publikováno v:
Applied Physics Letters. 92:041910
The optical transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb quantum wells with the width varying from 10to21nm were studied by room temperature contactless electroreflectance (CER). In addition to the quantum well (QW) ground state transition (11H), t