Zobrazeno 1 - 10
of 70
pro vyhledávání: '"K. Posilovic"'
Autor:
K. Posilovic, Vladimir Kalosha, T. Kettler, M. J. Miah, Markus Weyers, Dieter Bimberg, J. Pohl
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:722-727
Thermally stable and nearly astigmatism free 1060-nm high-brightness photonic band crystal lasers are presented. A thick asymmetric waveguide with an optimized doping profile is employed. The prominent mode-discrimination property of the structure yi
Publikováno v:
IEEE Journal of Quantum Electronics. 48:123-128
We present modeling results for lateral-longitudinal modes of longitudinally inhomogeneous finite-length waveguides of ridge semiconductor lasers generating high brightness emission. By numerical solution of the wave equation for a 2-D waveguide, inc
Autor:
T. Kettler, F. Bugge, A. V. Chunareva, Daniel Seidlitz, M Winterfeldt, Y.M. Shernyakov, Markus Weyers, Dieter Bimberg, L Y Karachinsky, N.N. Ledentsov, V Kalosha, Mikhail V. Maximov, N Y Gordeev, K. Posilovic, V.A. Shchukin, Innokenty I. Novikov
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1014-1027
Semiconductor laser diodes are conventionally based on a relatively thin waveguide structure grown epitaxially on a thick single crystalline substrate, wherein the latter serves as a medium for carrier flow and as mechanical support and plays no role
Autor:
T. Kettler, Dieter Bimberg, V.A. Shchukin, Peter Ressel, G. Erbert, J. Fricke, K. Posilovic, J. Jonsson, N.N. Ledentsov, Arnim Ginolas, L. Ya. Karachinsky, U. W. Pohl, G. Trankle, Markus Weyers
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:901-908
Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam divergence of about 7deg full-width at half maximum without using corrective optics. A hig
Autor:
Nikolay N. Ledentsov, N. Yu. Gordeev, L. Ya. Karachinsky, D. Bortman-Arbiv, U. Ben-Ami, K. Posilovic, T. Kettler, Y.M. Shernyakov, A. Sharon, Innokenty I. Novikov, Vitaly Shchukin, Dieter Bimberg, Mikhail V. Maximov
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 14:1113-1122
We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer
Autor:
Yu. M. Shernyakov, Vitaly Shchukin, A. R. Kovsh, T. Kettler, A. E. Zhukov, Dieter Bimberg, Innokenty I. Novikov, V. M. Ustinov, N. N. Ledentsov, K. Posilovic, Mikhail V. Maximov, A.Yu. Gladyshev, L. Ya. Karachinsky
Publikováno v:
Journal of Crystal Growth. :914-922
We have studied growth phenomena and structural and optical properties of metamorphic (MM) quantum dots (QDs) and QD lasers emitting in the 1.4–1.5 μm range. InAs/InGaAs QDs were grown on top of (In,Ga)As buffer layers deposited on GaAs (1 0 0) su
Publikováno v:
Journal of Crystal Growth. 298:591-594
Laser diodes based on InGaAs quantum dots (QDs) operating at 1250 nm with ultra-low threshold current densities of 66 A/cm 2 , transparency current densities of 52 A/cm 2 , and high internal quantum efficiencies of 94% have been realized using altern
Autor:
N. Yu. Gordeev, O. Schulz, Nikolay N. Ledentsov, Dieter Bimberg, K. Posilovic, Gerrit Fiol, A. R. Kovsh, Mikhail V. Maximov, Elizaveta Semenova, A. P. Vasil’ev, A. Lochmann, Matthias Kuntz, V. M. Ustinov, L. Reissmann, N. V. Kryzhanovskaya, Yu. M. Shernyakov, Vitaly Shchukin, Alexey E. Zhukov, T. Kettler, S. S. Mikhrin, L. Ya. Karachinsky, Innokenty I. Novikov
Publikováno v:
Semiconductor Science and Technology. 21:691-696
1.5 µm-range laser diodes based on InAs/InGaAs quantum dots (QDs) grown on metamorphic (In, Ga, Al)As layers, which were previously deposited on GaAs substrates using a defect reduction technique (DRT), are studied. More than 7 W total output power
Autor:
K. Lauritsen, J. Pohl, M. J. Miah, T. Kettler, Ricardo Rosales, Vladimir Kalosha, Markus Weyers, K. Posilovic, Dieter Bimberg
Publikováno v:
2014 IEEE Photonics Conference.
Autor:
André Strittmatter, K. Posilovic, T. D. Germann, Dieter Bimberg, U. W. Pohl, Th. Kettler, J. Pohl
Publikováno v:
Journal of Crystal Growth. 310:5066-5068
The blue shift of metalorganic vapor phase epitaxy grown 1.3 μm InGaAs quantum dot (QD) emission wavelength during stacking and overgrowth is investigated. Defect generation in the vicinity or with the QD layers is identified as the major source for