Zobrazeno 1 - 10
of 152
pro vyhledávání: '"K. Paprocki"'
Publikováno v:
Crystals, Vol 9, Iss 3, p 148 (2019)
This work is dedicated to the preparation and characterization of the radio-, thermo-, and photoluminescent properties of Lu2O3:Eu and Lu2O3:Tb nanopowder (NPs) scintillators, prepared by means of hydrothermal processing, and their film analogues mad
Externí odkaz:
https://doaj.org/article/48f5126c41ac48aaa7059cef54872e3c
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Vacuum. 72:363-367
Substrate temperature is an importance parameter controlling nucleation and growth dynamics during the thin film epitaxy in MBE system. The most covenant methods able to determine the substrate temperature is based on some calibration procedures, whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef7b2eb4487cd2fb04c8d9126e97aa6
https://doi.org/10.1016/j.vacuum.2003.09.005
https://doi.org/10.1016/j.vacuum.2003.09.005
Analysis of RHEED intensities during formations of the CaF2/Si(111) and MgO/YSi2−x/Si(100) interface
Publikováno v:
Vacuum. 57:229-236
We have explored the epitaxial growth of two types of insulators on silicon substrate. CaF 2 and MgO are able to block silicon diffusion to the growing surface forming stable interfaces type Si–Ca–F and MgO/YSi 2− x in molecular beam epitaxy (M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d715969fc23f8039545af2948d7f05b
https://doi.org/10.1016/s0042-207x(00)00128-7
https://doi.org/10.1016/s0042-207x(00)00128-7
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Physical Review B. 57:12443-12447
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b255d6fea3e7202a169008682f5cafdd
https://doi.org/10.1103/physrevb.57.12443
https://doi.org/10.1103/physrevb.57.12443
Publikováno v:
Surface Science. 391:226-236
For the first time reflection high-energy electron diffraction intensity oscillations were observed during reactive deposition epitaxy (RDE) growth of YSi2 − x (x ≅0.3) on the Si(111) surface. The YSi2 − x crystallographic structure consists of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c604ea0ddba101247cae833d737f2e09
https://doi.org/10.1016/s0039-6028(97)00486-x
https://doi.org/10.1016/s0039-6028(97)00486-x
Publikováno v:
Thin Solid Films. 306:220-223
Reflection high energy electron diffraction (RHEED) intensity oscillations were observed during molecular beam epitaxy (MBE) growth of Ge on Si(111) surface. At 250 °C the oscillations continue up to 6 monolayers. The intensity of the reflected beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cde0e73195d8364a26fb1149ecaae879
https://doi.org/10.1016/s0040-6090(97)00183-1
https://doi.org/10.1016/s0040-6090(97)00183-1
Publikováno v:
Physical Review B. 53:10200-10208
A method of characterization of ultrathin layers based on analysis of reflection high-energy electron diffraction (RHEED) azimuthal plots using dynamical diffraction theory is presented. Dysprosium silicide thin films are grown on a Si(111)-7\ifmmode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cfb853632e3a6ea91a431218045789d
https://doi.org/10.1103/physrevb.53.10200
https://doi.org/10.1103/physrevb.53.10200
Publikováno v:
Thin Solid Films. 267:95-98
The growth kinetics and surface structure of Y, Dy and Co suicides are examined using a new reflection high-energy electron diffraction (RHEED) method. We prepared epitaxial silicide films on (111) Si by (1) deposition of metal and contact reaction (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cabdb1465a3b857def3b67e9e843580
https://doi.org/10.1016/0040-6090(95)06660-8
https://doi.org/10.1016/0040-6090(95)06660-8