Zobrazeno 1 - 10
of 55
pro vyhledávání: '"K. Panzlaff"'
Autor:
F. Heine, K. Panzlaff, Matthias Motzigemba, Herwig Zech, Daniel Troendle, Sabine Philipp-May, Rolf Meyer, P. M. Pimentel
Publikováno v:
International Conference on Space Optics — ICSO 2014.
The performance of sensors for Earth Observation Missions is constantly improving. This drives the need for a reliable, high-speed data transfer capability from a Low Earth Orbit (LEO) spacecraft (S/C) to ground. In addition, for the transfer of time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17720fb0dd68d23addec75de1e299bd7
https://doi.org/10.1117/12.2304149
https://doi.org/10.1117/12.2304149
Publikováno v:
Physical Review B. 53:13011-13015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0691f84f17137e569a520e30108eef8
https://doi.org/10.1103/physrevb.53.13011
https://doi.org/10.1103/physrevb.53.13011
Publikováno v:
Materials Science and Engineering: B. 35:245-249
We report on temperature and electric field dependent photoluminescence (PL) and photoluminescence excitation (PLE) investigations on asymmetry double-quantum-well (ADQW) structures. Each sample contains AlGaAs GaAs QWs, 3 nm and 6 nm wide, separated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::849b3730c26ab45bfb3af7a160219008
https://doi.org/10.1016/0921-5107(95)01327-x
https://doi.org/10.1016/0921-5107(95)01327-x
Publikováno v:
Journal of Physics: Condensed Matter. 7:7761-7773
We have investigated the coupling of hole intersubband transitions and phonons in p-type modulation-doped GaAs-AlxGa1-xAs multiple quantum wells by means of resonance Raman spectroscopy. Magnetic fields with flux densities up to B=14 T were applied,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9eb64f30376909895f1d685178ebec
https://doi.org/10.1088/0953-8984/7/40/007
https://doi.org/10.1088/0953-8984/7/40/007
Publikováno v:
Physical Review B. 50:18387-18394
By means of resonance Raman spectroscopy we have investigated intersubband transitions of quasi-two-dimensional (2D) hole gases in p-type modulation-doped GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5da2753ac661b6386bd0807fc74d60e
https://doi.org/10.1103/physrevb.50.18387
https://doi.org/10.1103/physrevb.50.18387
Publikováno v:
Materials Science and Engineering: B. 22:55-60
As-grown (σ-conductive) and annealed (semi-insulating (SI)) low temperature (LT) double layers have been analysed by conductivity profiling. The σ-LTGaAs/GaAs junction represents an NT+/GaAs junction with no noticeable depletion effects in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd115e305758c4d38661279fa312450
https://doi.org/10.1016/0921-5107(93)90223-a
https://doi.org/10.1016/0921-5107(93)90223-a
Publikováno v:
Materials Science and Engineering: B. 21:228-231
We have used solid source molecular beam epitaxy (MBE) with As 4 to grow multilayer structures for vertical cavity surface emitting laser diodes (VCSEL) on n-GaAs substrates. Processed wafers with strained InGaAs active layers show a record low thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374c138ff7ee298400e1701822e80963
https://doi.org/10.1016/0921-5107(93)90354-p
https://doi.org/10.1016/0921-5107(93)90354-p
Publikováno v:
IEEE Photonics Technology Letters. 5:889-892
Submilliampere-threshold wavelength-tunable three-terminal vertical-cavity laser diodes have been fabricated by proton implantation and wet chemical etching. Laser diodes of 8- mu m active diameter exhibit record low threshold currents of 650 mu A an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccfb2b60ea6d0d752c657dddddc0b09a
https://doi.org/10.1109/68.238244
https://doi.org/10.1109/68.238244
Publikováno v:
Physical Review B. 47:9706-9709
By means of resonance Raman spectroscopy we have observed a characteristic shift of hole-intersubband transitions with excitation energy in p-doped GaAs/AlxGa1-xAs quantum-well structures. As possible reasons for the shift, the nonparabolicity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67dffe2869bc8b7df26120548d5ed7c5
https://doi.org/10.1103/physrevb.47.9706
https://doi.org/10.1103/physrevb.47.9706
Publikováno v:
Microelectronic Engineering. 19:223-226
The structure and fabrication of a wavelength selective photodetector is described. The experimentally achieved maximum quantum efficiency is more than 10% at resonance with 1.5nm spectral width at half maximum and a free spectral range of ca. 30nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e2d77ff9007b989ed2fb5c149fa9ab
https://doi.org/10.1016/0167-9317(92)90428-t
https://doi.org/10.1016/0167-9317(92)90428-t