Zobrazeno 1 - 10
of 17
pro vyhledávání: '"K. P. Rodbell"'
Autor:
R. T. Gordon, C. E. Murray, C. Kurter, M. Sandberg, S. A. Hall, K. Balakrishnan, R. Shelby, B. Wacaser, A. A. Stabile, J. W. Sleight, M. Brink, M. B. Rothwell, K. P. Rodbell, O. Dial, M. Steffen
Publikováno v:
Applied Physics Letters. 120:074002
Quantum computing relies on the operation of qubits in an environment as free of noise as possible. This work reports on measuring the impact of environmental radiation on lifetimes of fixed frequency transmon qubits with various capacitor pad geomet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bc213b01e95df143b8eec9ec02edc4f
https://doi.org/10.1063/5.0078785
https://doi.org/10.1063/5.0078785
Autor:
K. P. Rodbell, C. E. Murray
Publikováno v:
Journal of Applied Physics. 89:2337-2342
Deposition surface morphology plays a major role in governing the texture within sputter deposited Al (0.5% wt., Cu) films. The presence of a thin Ti barrier layer provides an epitaxial template for Al(Cu) atoms to grow. However, the topography of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa09fa4fbf93b1d0b26d9bdfceb1357
https://doi.org/10.1063/1.1337938
https://doi.org/10.1063/1.1337938
Publikováno v:
Journal of Applied Physics. 80:4952-4959
A systematic study was performed of the microstructural and electromigration characteristics of Ti–Al(Cu)–Ti laminate structures fabricated from two metal wiring levels 1 μm in width. The total Cu content in the Al(Cu) core layers was varied fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::503b5138eb2e0fea9235d065a9222173
https://doi.org/10.1063/1.363539
https://doi.org/10.1063/1.363539
Publikováno v:
Canadian Metallurgical Quarterly. 34:287-292
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::950a64ef32d1127b3fff0e51f5626808
https://doi.org/10.1179/cmq.1995.34.3.287
https://doi.org/10.1179/cmq.1995.34.3.287
Publikováno v:
IBM Journal of Research and Development. 39:465-497
Physical phenomena underlying failure due to electromigration and stress-induced voiding in fine Al and Al-alloy thin-film conducting lines are examined in the context of accelerated testing methods and structures. Aspects examined include effects du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60abdd2265fadc3fc64aa1399e997fcd
https://doi.org/10.1147/rd.394.0465
https://doi.org/10.1147/rd.394.0465
Autor:
E. G. Colgan, K. P. Rodbell
Publikováno v:
Journal of Applied Physics. 75:3423-3434
The microstructure and Cu distribution were determined for blanket and patterned Al(≤4 wt % Cu) thin films as a function of annealing. The growth of Θ‐phase (Al2Cu) precipitates in blanket and patterned submicrometer‐wide lines was quantified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ad1892eb93fd8f7c7f5c32b531a5e02
https://doi.org/10.1063/1.356102
https://doi.org/10.1063/1.356102
Publikováno v:
Physical Review B. 43:1422-1432
Etude des reactions dans les raies fines de Al et Hf et des modifications de ces reactions introduites par des additions de cuivre soluble a Al. On identifie le compose HfAl 3 . Sa croissance est controlee par la diffusion. La dependance de la consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::579f6bfe853c8a2e2b2d1fd08dafb19f
https://doi.org/10.1103/physrevb.43.1422
https://doi.org/10.1103/physrevb.43.1422
Publikováno v:
Applied Physics Letters. 68:1625-1627
We have investigated the segregational properties of polycrystalline Al(Cu) alloys in the composition range of 0.04 to 0.5 at. % Cu using medium energy ion scattering. While Cu does not segregate to the bare surface, significant quantities of Cu are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f5a4f582b3044f4e2fa72fe7a54489
https://doi.org/10.1063/1.115672
https://doi.org/10.1063/1.115672
Publikováno v:
Journal of Applied Physics. 69:7921-7923
Redistribution and uptake of hydrogen was found to occur during anneals in forming gas (90% N2+10% H2) of thin‐film AlCu/Ti/AlCu sandwich layers deposited on a thin layer of SiO2. Annealing at 350 or 400 °C for 30 min caused the Ti‐containing la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c7095658829983cc0d2c6121bef1d2e
https://doi.org/10.1063/1.347483
https://doi.org/10.1063/1.347483
Publikováno v:
MRS Proceedings. 565
As technology progresses, the need for thinner Cu diffusion barrier caps is becoming more important, and it is advantageous if these barriers have low dielectric constants (κ). Towards this end, we characterized Cu penetration in several thin (35 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f6f39933d202b25a7d62abaf60b8d4
https://doi.org/10.1557/proc-565-189
https://doi.org/10.1557/proc-565-189