Zobrazeno 1 - 10
of 90
pro vyhledávání: '"K. P. Jain"'
Publikováno v:
Journal of the Indian Academy of Geriatrics, Vol 12, Iss 4, Pp 172-178 (2016)
Background: Hyponatremia is a condition when serum sodium is
Externí odkaz:
https://doaj.org/article/20c245241c2b454b8434dd1073f0c28e
Autor:
K. C. Jain, Praphull Chhabra
Publikováno v:
Le Matematiche, Vol 70, Iss 2, Pp 271-281 (2015)
In this work, we introduce new information inequalities on new generalized f-divergence in terms of well known Chi-square divergence. Further we obtain relations of other standard divergence as an application of new inequalities by using Logarithmic
Externí odkaz:
https://doaj.org/article/85fb284ee155449ab7f1753e98ebe8d6
Publikováno v:
Journal of Indian Association of Public Health Dentistry, Vol 11, Iss 2, Pp 27-33 (2013)
Background: Human skin is a reservoir of numerous microorganisms. Even though hand washing with soap and water alone reduces the microbial load, the complementary uses of hand antiseptics enhance the antimicrobial effect. Aim: To compare the antimicr
Externí odkaz:
https://doaj.org/article/c1ff5efa2cad44fbb244758143afa68f
Autor:
L C Jain and K P Jain
Publikováno v:
Proceedings of Indian National Science Academy, Vol 28, Iss 4 (2015)
Constant -Set (Dhruva -Rasi) Technique in Jaina School of Astronomy
Publikováno v:
Journal of Metastable and Nanocrystalline Materials. 23:129-132
We study (through computer simulation) the variation of the band gap as a function of sizes and shapes of small Silicon (Si) dots using pseudo-potential approach. We have used empirical pseudo-potential Hamiltonian and a plane wave basis expansion an
Publikováno v:
Thin Solid Films. 397:125-132
Visible and infrared lasers have been used to photochemically fabricate photoluminescent porous silicon thin films on n-type silicon substrates. Photoluminescence measurements on porous silicon exhibit a two-peak structure for argon–ion laser etchi
Publikováno v:
Journal of Non-Crystalline Solids. 286:162-168
Photoluminescence (PL) spectra of porous silicon (PS) samples fabricated with laser-induced etching (LIE) in HF acid are analyzed using a quantum confinement model with an assumption that porous silicon consists of a distribution of nanocrystallites
Publikováno v:
Bulletin of Materials Science. 24:285-289
We investigated the optical properties of silicon clusters and Si nanocrystallites using photolumine-scence (PL) and Raman scattering technique. Broad luminescence band in the red region was observed from Si-doped SiO2 thin films deposited by co-sput
Publikováno v:
Journal of Physics D: Applied Physics. 34:292-298
Porous silicon was fabricated by using a Nd:YAG laser in a laser-induced etching process. Scanning electron microscopy was used to monitor changes in surface morphology produced during the etching process. Porous silicon samples were subjected to spe