Zobrazeno 1 - 6
of 6
pro vyhledávání: '"K. P. Hilton"'
Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAs
Autor:
B. H. Hughes, Melanie W. Cole, D. W. Eckart, M. A. Crouch, K. P. Hilton, Kenneth A. Jones, W. Y. Han
Publikováno v:
Journal of Applied Physics. 82:1723-1729
NiGeAu and PdGeTiPt ohmic contacts to n-GaAs and TiPd and PdGeTiPt ohmic contacts to p+-GaAs are examined by comparing their contact resistances, chemical intermixing as determined by Auger electron microscopy, interface structure as determined by tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a526c9d798928ceda8a0c0eb013f3ec8
https://doi.org/10.1063/1.365973
https://doi.org/10.1063/1.365973
Publikováno v:
Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.
Summary form only given. In this paper we compare the electrical, physical, and chemical properties of TiPdAu and PdGeTiPt contacts for GaAs HBT's. Contact and specific contact resistances are measured using the TLM method and devices made with the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589524773fd6fa02f30c36f023dc901d
https://doi.org/10.1109/edmo.1995.493688
https://doi.org/10.1109/edmo.1995.493688
Autor:
K. P. Hilton, Dietrich R. T. Zahn, U. Rossow, W. Richter, D.V. Morgan, H. Thomas, J. Woodward, M. S. Puttock
Publikováno v:
MRS Proceedings. 190
Crystal damage of GaAs(100) caused by Reactive Ion Etching (RIE) using a mixture of Cl2 and Ar gas has been assessed using Surface Roughness (Ra), Resonant Raman Spectroscopy (RRS), Schottky diodes, and Spectroscopic Ellipsometry (SE). Plasma conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9fbb0c18fa0295615cab3ffa7ef563a
https://doi.org/10.1557/proc-190-255
https://doi.org/10.1557/proc-190-255
Autor:
T. Ashley, L. Buckle, M. T. Emeny, M. Fearn, D. G. Hayes, K. P. Hilton, R. Jefferies, T. Martin, T. J. Phillips, J. Powell, A. W. H. Tang, D. Wallis, P. J. Wilding
Publikováno v:
2006 IEEE Compound Semiconductor Integrated Circuit Symposium; 2006, p121-124, 4p
Autor:
K V Vassilevski, N G Wright, I P Nikitina, A B Horsfall, A G O'Neill, M J Uren, K P Hilton, A G Masterton, A J Hydes and C M Johnson
Publikováno v:
Semiconductor Science & Technology; Mar2005, Vol. 20 Issue 3, p271-278, 8p
Publikováno v:
Journal of Physics: Condensed Matter. 1:SB231-SB233
GaAs(100) surfaces were prepared by reactive ion etching using different etches and a series of plasma powers. In order to study the surface quality, ellipsometry and Raman scattering were applied. This combination allows damage at the surface and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38a845e821360ee39c713e14bdbdc45
https://doi.org/10.1088/0953-8984/1/sb/055
https://doi.org/10.1088/0953-8984/1/sb/055