Zobrazeno 1 - 3
of 3
pro vyhledávání: '"K. P. H. Lui"'
Autor:
K. P. H. Lui, Frank A. Hegmann
Publikováno v:
Journal of Applied Physics. 93:9012-9018
We study the effects of lattice damage level, pump fluence, and temperature on carrier dynamics in thin silicon films. Two samples of radiation-damaged silicon-on-sapphire (RD-SOS) and one amorphous silicon thin film on sapphire were investigated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2624f68b04f95f7001c6d92ee15cbb
https://doi.org/10.1063/1.1569665
https://doi.org/10.1063/1.1569665
Autor:
Frank A. Hegmann, K. P. H. Lui
Publikováno v:
Applied Physics Letters. 78:3478-3480
We investigate the relaxation of photogenerated carriers in radiation-damaged silicon on sapphire using a collinear optical-pump–terahertz-probe arrangement. Carrier densities greater than 1020 cm−3 are injected using 400 nm, 100 fs pump pulses,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dacc54e801a3d3c82b983752cdb013d6
https://doi.org/10.1063/1.1375841
https://doi.org/10.1063/1.1375841
Publikováno v:
Physical Review Letters. 89
We have measured transient photoconductivity in functionalized pentacene molecular crystals using ultrafast optical pump--terahertz probe techniques. The single crystal samples were excited using 800 nm, 100 fs pulses, and the change in transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f26e81e0b85267628c7a8485a96e9575
https://doi.org/10.1103/physrevlett.89.227403
https://doi.org/10.1103/physrevlett.89.227403