Zobrazeno 1 - 10
of 66
pro vyhledávání: '"K. Pötschke"'
Autor:
Dieter Bimberg, Namık Akçay, N. Öncan, T. Nowozin, A. Marent, K. Pötschke, Martin Geller, D. Feise
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1811-1814
A concept of a memory device based on self-organized quantum dots (QDs) is presented, which has the potential to fulfill the requirements of an universal memory. We demonstrate here a hole storage time of 1.6 s at room temperature in InAs/GaAs QDs wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6efb8763558e0ed3478c2fbbe73e8658
https://doi.org/10.1016/j.physe.2007.09.108
https://doi.org/10.1016/j.physe.2007.09.108
Publikováno v:
physica status solidi (b). 244:53-58
We report on low-temperature photoluminescence experiments on self-assembled InAs/GaAs quantum dots under high hydrostatic pressure up to 8 GPa using a diamond anvil cell. The sample exhibits a multimodal size distribution of the quantum dots, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ca2a1fbd09d3ef4b37cdd018d2c527e
https://doi.org/10.1002/pssb.200672511
https://doi.org/10.1002/pssb.200672511
Autor:
K. Pötschke, Andrei Schliwa, Dieter Bimberg, U. W. Pohl, F. Guffarth, Robert Seguin, Sven Rodt
Publikováno v:
Journal of Luminescence. :735-739
A systematic study of excitonic complexes confined in single InAs/GaAs quantum dots is presented. Emphasis is placed on the recombination energies of the excitonic complexes and on the fine-structure splitting of the bright exciton ground state. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d95414ba2875388f2730ae05f1fbf3
https://doi.org/10.1016/j.jlumin.2006.01.274
https://doi.org/10.1016/j.jlumin.2006.01.274
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 35:285-292
A systematic dependence of excitonic properties on the size of self-organized InAs/GaAs quantum dots is presented. The bright exciton fine-structure splitting changes from negative values to more than 0.5 meV, and the biexciton binding energy varies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0931562e3bdd1d44edaac72e169f215b
https://doi.org/10.1016/j.physe.2006.08.014
https://doi.org/10.1016/j.physe.2006.08.014
Autor:
Dieter Bimberg, Ganesh Balakrishnan, Holger Eisele, Mario Dähne, L. Ivanova, U. W. Pohl, Diana L. Huffaker, Andrea Lenz, K. Pötschke, Rainer Timm
Publikováno v:
physica status solidi c. 3:3971-3974
We present cross-sectional scanning tunneling microscopy results on GaSb nanostructures in GaAs, analyzing their shape, size and chemical composition. By comparing different quantum wells and quantum dot layers, grown both by metalorganic chemical va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535bc760c25dd74be3cc5a72253bb6e4
https://doi.org/10.1002/pssc.200671605
https://doi.org/10.1002/pssc.200671605
Autor:
U. W. Pohl, K. Pötschke, Dieter Bimberg, David E Jesson, Vitaly Shchukin, Andrei Schliwa, M B Lifshits
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:9-13
Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition near the critical thickness during a growth interruption (GRI) prior to cap layer growth a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af3f5afa1309b3c4f1b6d38f9ff9c1cd
https://doi.org/10.1016/j.physe.2005.12.145
https://doi.org/10.1016/j.physe.2005.12.145
Autor:
Holger Eisele, Rainer Timm, U. W. Pohl, Andrea Lenz, Mario Dähne, F. Streicher, T.-Y. Kim, Dieter Bimberg, K. Pötschke
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:25-28
InAs quantum dots in GaAs, grown under the presence of Sb by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Large flat quantum dots with a truncated pyramidal shape, base lengths between 15 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3337aaa95bc6af3441bd359bd0ae8e6
https://doi.org/10.1016/j.physe.2005.12.009
https://doi.org/10.1016/j.physe.2005.12.009
Publikováno v:
Applied Surface Science. 252:5555-5558
Formation of a multimodal quantum dot (QD) ensemble by strained layer epitaxy of InAs on GaAs near the critical value for the onset of the 2D–3D transition is studied. Reflection anisotropy spectroscopy is employed to confirm that a smooth surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caba457d67fc03bb7e74925b81ee5592
https://doi.org/10.1016/j.apsusc.2005.12.092
https://doi.org/10.1016/j.apsusc.2005.12.092
Autor:
K. Pötschke, Holger Eisele, L. Müller-Kirsch, Mario Dähne, Andrea Lenz, Dieter Bimberg, Rainer Timm, S. K. Becker, J. Grabowski, U. W. Pohl
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 26:231-235
GaSb nanostructures in GaAs, grown by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Three different samples were examined, containing a thin quantum well, a quantum well near the critical thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfdca3f59f570da417816b4dc94e3d5
https://doi.org/10.1016/j.physe.2004.08.058
https://doi.org/10.1016/j.physe.2004.08.058
Publikováno v:
Journal of Crystal Growth. 272:143-147
Reflectance and reflectance anisotropy spectroscopy (RAS) were used to control in-situ the complex MOCVD growth process of both InGaAs/GaAs quantum dots (QDs) and lasers with such QDs in the active region. Spectra and transients yield online informat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7090edc46c334f89d85a0f00bbc552d5
https://doi.org/10.1016/j.jcrysgro.2004.08.102
https://doi.org/10.1016/j.jcrysgro.2004.08.102