Zobrazeno 1 - 10
of 34
pro vyhledávání: '"K. Owyang"'
Publikováno v:
IEEE Transactions on Industry Applications. 26:831-834
Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d01271ccc57a769c9d55589c2888b3
https://doi.org/10.1109/28.60048
https://doi.org/10.1109/28.60048
Publikováno v:
IEEE Transactions on Industry Applications. 26:793-797
The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6fb4249bc29abfef5350c99d4edc7a
https://doi.org/10.1109/28.56007
https://doi.org/10.1109/28.56007
Publikováno v:
Automotive Power Electronics.
Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 m Omega -cm/sup 2/, about half the value obtained by present producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57e06e671df90173a67748e3006baa87
https://doi.org/10.1109/ape.1989.97148
https://doi.org/10.1109/ape.1989.97148
Publikováno v:
20th Annual IEEE Power Electronics Specialists Conference.
The physical origin of the safe-operating-area (SOA) limitation in power DMOSFETs lies in the parasitic bipolar junction transistor (BJT) which is inherent to these devices. Direct-current SOA depends on transconductance and thermal variations of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70535a2e522a47132293cb4ec85eafe
https://doi.org/10.1109/pesc.1989.48487
https://doi.org/10.1109/pesc.1989.48487
Publikováno v:
Proceedings of WESCON '93.
The PREP Benchmarks provide a wealth of data pertaining to performance and capacity of high-capacity programmable logic devices. The benchmarks contain many common functions which designers can use to determine whether the critical portion of an appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6e7f72bef05101fb669991655da297e
https://doi.org/10.1109/wescon.1993.488440
https://doi.org/10.1109/wescon.1993.488440
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
A scaled-oxide low-threshold P-channel trench gated DMOS employing a 12 Mcell/in/sup 2/. (2 Mcell/cm/sup 2/) closed-cell design, 8-V gate rating and 30-V drain rating is described. Measured specific resistances of 900 /spl mu//spl Omega/-cm/sup 2/ at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c86aef95b89ef13a1f16ae8250ed2e7
https://doi.org/10.1109/ispsd.1996.509447
https://doi.org/10.1109/ispsd.1996.509447
Publikováno v:
Proceedings of 1994 IEEE Applied Power Electronics Conference and Exposition - ASPEC'94.
The concepts and practice of World Class Manufacturing (WCM) have helped Siliconix come back from bankruptcy to profitability in the space of three years. The paper discusses changes in the company's vision, mentality, and engineering organization th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a179245e21b5278329b56923794b4bf
https://doi.org/10.1109/apec.1994.316398
https://doi.org/10.1109/apec.1994.316398
Autor:
W. Grabowski, Mohamed N. Darwish, Hamza Yilmaz, Mike F. Chang, K. Owyang, Richard K. Williams
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
A new concept to control TrenchFET avalanche breakdown using an evenly distributed array of voltage clamps in a 1-of-n cell arrangement is introduced, improving on-resistance without sacrificing device ruggedness. Using this technique, a 32 Mcell/in/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2207514002a329394f7fcafd92318d37
https://doi.org/10.1109/iedm.1997.650400
https://doi.org/10.1109/iedm.1997.650400
Autor:
Michael S. Adler, K. Owyang, G.C. Pifer, Eric Joseph Wildi, Hamza Yilmaz, R.G. Hodgins, M.F. Chang
Publikováno v:
IEEE Transactions on Electron Devices. 33:1992-2001
The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac29300702cc0b56b7dc9272497b91f7
https://doi.org/10.1109/t-ed.1986.22858
https://doi.org/10.1109/t-ed.1986.22858
Publikováno v:
IEEE Transactions on Electron Devices. 32:2812-2818
The Insulated Gate Transistor (IGT) is modeled as a bi-polar junction transistor (BJT) driven by a MOSFET. The bipolar nature of the device is examined by studying the effects of carrier lifetime on electrical performance. This model also predicts th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dada2eee72a80412bc3a3011158ff31e
https://doi.org/10.1109/t-ed.1985.22420
https://doi.org/10.1109/t-ed.1985.22420