Výsledky vyhledávání - "K. O. Voropaev"

The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

Autor: A. A. Blokhin, Innokenty I. Novikov, D. V. Denisov, A. V. Babichev, M. A. Bobrov, Nikolai A. Maleev, S. S. Rochas, S. A. Blokhin, A. G. Kuzmenkov, L. Ya. Karachinsky, A. P. Vasil’ev, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, A. S. Ionov, A. G. Gladyshev

Publikováno v: Technical Physics Letters. 46:1257-1262

An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained by wafer fusion of heterostructures grow

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a62c9ad38d363aff5e9005d2930f6cf0
https://doi.org/10.1134/s1063785020120172

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1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy

Autor: M. A. Bobrov, A. V. Babichev, S. N. Nevedomsky, S. S. Rohas, A. Yu. Egorov, A. G. Gladyshev, D. V. Denisov, A. A. Blokhin, A. G. Kuzmenkov, A P Vasyl’ev, K. O. Voropaev, L. Ya. Karachinsky, N. A. Maleev, V. M. Ustinov, Sergey A. Blokhin, Innokenty I. Novikov, A. S. Ionov

Publikováno v: Semiconductors. 54:1276-1283

The results are presented of a study and optimization of the conditions under which heterointerfaces of the GaAs–InGaAsP type are formed via the direct intermolecular wafer bonding (fusion) of a heterostructure of an active region on an InP substra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c798cb05573f46d84f248efc557b3fb
https://doi.org/10.1134/s1063782620100048

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A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

Autor: A. G. Kuzmenkov, V. M. Ustinov, A. V. Babichev, M. A. Bobrov, A. P. Vasil’ev, A. S. Ionov, L. Ya. Karachinsky, S. A. Blokhin, Innokenty I. Novikov, K. O. Voropaev, D. V. Denisov, Nikolai A. Maleev, A. Yu. Egorov, A. A. Blokhin, S. S. Rochas, A. G. Gladyshev

Publikováno v: Technical Physics Letters. 46:854-858

A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP/InP optical cavity and wafers with A

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e233f1fbe856ad90b24877a2a6d3140
https://doi.org/10.1134/s1063785020090023

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Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

Autor: A. V. Babichev, A. S. Ionov, Aleksey D. Andreev, A. G. Gladyshev, Sergey O. Slipchenko, I. I. Novikov, L. Ya. Karachinskii, E. A. Kognovitskaya, A. V. Lyutetskiy, Grigorii S. Sokolovskii, D. V. Denisov, Nikita A. Pikhtin, A. Yu. Egorov, K. O. Voropaev, V. I. Kuchinskii, D. A. Mikhailov, Vladislav V. Dudelev

Publikováno v: Quantum Electronics. 49:1158-1162

A technology of arrays of distributed-feedback semiconductor lasers for the spectral region of 1.55 μm and their characteristics are presented. Stable single-frequency lasing with a side mode suppression ratio higher than 25 dB is demonstrated. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa6588eab41c86c7349fb1bce53478d2
https://doi.org/10.1070/qel17130

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Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Autor: D. V. Denisov, Sergey A. Blokhin, M. A. Bobrov, A. S. Ionov, Innokenty I. Novikov, N. A. Maleev, A. A. Blokhin, A. G. Gladyshev, A. G. Kuzmenkov, S. S. Rochas, V. M. Ustinov, A. Yu. Egorov, E. S. Kolodeznyi, A. V. Babichev, L. Ya. Karachinsky, K. O. Voropaev

Publikováno v: Semiconductors. 53:1104-1109

The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InA

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9834d2a942cd64d732f4a4a80739045d
https://doi.org/10.1134/s1063782619080074

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Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique

Autor: K. O. Voropaev, A. Yu. Egorov, Innokenty I. Novikov, A. G. Kuzmenkov, E. S. Kolodeznyi, S. A. Blokhin, L. Ya. Karachinsky, Nikolay A. Maleev, S. S. Rochas, D. V. Denisov, A. S. Ionov, V. M. Ustinov, M. A. Bobrov, A. G. Gladyshev, A. V. Babichev, A. A. Blokhin

Publikováno v: Optics and Spectroscopy. 127:140-144

The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f85a8ceaae9a00771a46d1ea52971e1
https://doi.org/10.1134/s0030400x1907004x

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Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Autor: Leonid Ya. Karachinsky, Anton Yu. Egorov, Alexey Blokhin, Nikolai N. Ledentsov, Dmitrii Denisov, A. V. Babichev, A. S. Ionov, A. G. Gladyshev, Innokenty I. Novikov, S. S. Rochas, K. O. Voropaev, Sergey A. Blokhin

Publikováno v: Electronics Letters, Vol 57, Iss 18, Pp 697-698 (2021)

The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3001829a70c84e9d016226d83bf9de58
https://doi.org/10.1049/ell2.12232

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Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them

Autor: L. Ya. Karachinsky, A. A. Klimov, S. S. Rochas, S. A. Blokhin, A. S. Ionov, A. V. Babichev, A. S. Kurochkin, Innokenty I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, D. V. Denisov, Yu. K. Bobretsova, K. O. Voropaev

Publikováno v: Optics and Spectroscopy. 125:238-242

Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented. It is shown that the proposed designs of the gain medium allow obtaining the effective las

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b47492b6cf30d6ec8faeb6e9e1d21c59
https://doi.org/10.1134/s0030400x18080143

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Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion

Autor: Grzegorz Stepniak, A. V. Babichev, A. S. Ionov, A. G. Gladyshev, Vladimir Iakovlev, S. Mikhailov, Lukasz Chorchos, Alexei Sirbu, L. Ya. Karachinskii, Innokenty I. Novikov, M. Agustin, K. O. Voropaev, S. A. Blokhin, N. N. Ledentsov, Jaroslaw P. Turkiewicz, A. Yu. Egorov

Publikováno v: Technical Physics Letters. 44:24-27

The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In0.74Ga0.26 As quantum wells grown by molecular-beam epitaxy are pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::593282ca0046c692bd2f808a050ac33b
https://doi.org/10.1134/s1063785018010029

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