Zobrazeno 1 - 10
of 256
pro vyhledávání: '"K. Nummy"'
Deep Subwavelength Anti-Slot Photonic Crystals Fabricated in Monolithic Silicon Photonics Technology
Autor:
J. A. Allen, K. P. Arnold, S. I. Halimi, L. D. Ryder, F. O. Afzal, Y. Bian, A. Aboketaf, K. Dezfulian, M. Rakowski, R. Augur, T. Hirokawa, K. Nummy, Sharon M. Weiss
Publikováno v:
IEEE Photonics Technology Letters. 35:461-464
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cff980f52a4bda7e3102b1bf8689513
https://doi.org/10.1109/lpt.2023.3255821
https://doi.org/10.1109/lpt.2023.3255821
Publikováno v:
Microscopy Today. 29:36-44
2-D junction characterization by dual lens electron holography, scanning capacitance microscopy (SCM), and scanning spreading resistance microscopy (SSRM) on a variety of semiconductor devices is reported, including optical modulators, regular comple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3251800303e70876e4304e295dfc05c9
https://doi.org/10.1017/s1551929521000675
https://doi.org/10.1017/s1551929521000675
Publikováno v:
Microscopy and Microanalysis. 24:1464-1465
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107d38fa16d3df60958016ebaa8da64e
https://doi.org/10.1017/s1431927618007808
https://doi.org/10.1017/s1431927618007808
Akademický článek
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Akademický článek
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Autor:
Moghith, Walid M. A.1 walidmoghith@drc.gov.eg
Publikováno v:
Alexandria Science Exchange Journal. Jul-Sep2024, Vol. 45 Issue 3, p409-419. 11p.
Autor:
K. Nummy, V. J. Silvestri, R. Bendernagel, J. Hann, V. T. Phan, D. Kerr, J. O. Borland, P. Ronsheim
Publikováno v:
Journal of The Electrochemical Society. 137:2323-2327
ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850 o C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c6b97bd51aa803c305b22af27c1766
https://doi.org/10.1149/1.2086935
https://doi.org/10.1149/1.2086935
Autor:
Andrew Waite, B. Yang, C. D. Sheraw, H. Yin, M. Yang, S. D. Kim, X. Chen, D. Fried, B. Kim, L. Black, Scott Luning, P. Agnello, K. Nummy, M. Khare, S. Narasimha
Publikováno v:
2007 International Workshop on Electron Devices and Semiconductor Technology (EDST).
Hybrid-orientation technology (HOT), a novel planar CMOS approach that fabricates NMOS on (100) silicon surface and PMOS on (110) silicon surface to take advantage of the highest carrier mobilities on these surfaces, is reviewed. HOT module process f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdac0b032997046ab6ee7ccdd5c147b4
https://doi.org/10.1109/edst.2007.4289768
https://doi.org/10.1109/edst.2007.4289768
Autor:
D. Schepis, C.Y. Sung, H. Yin, B. Kim, B. Yang, M. Khare, L. Black, C. D. Sheraw, Donggun Park, H.V. Meer, X. Chen, J. Johnson, Andrew Waite, K. Nummy, H. Gossmann, P. Agnello, Philip A. Fisher, Scott Luning, S. Narasimha, D. Chidambarrao, Judson R. Holt, S. D. Kim, D. Wehella-gamage, Y. Liu
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
This work demonstrates that the ~2times mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190 nm liners poly-pitch for devices under compressive stress. (110) PMOS with 3.5 GPa compressively stressed liners demonstrate strong cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32302cf3b5b7573ebb1e823ddd71acea
https://doi.org/10.1109/vlsit.2007.4339753
https://doi.org/10.1109/vlsit.2007.4339753
Autor:
Byeong Y. Kim, Richard A. Wachnik, Hasan M. Nayfeh, Henry K. Utomo, Mukesh Khare, Jian Yu, Jinping Liu, Anthony G. Domenicucci, Haizhou Yin, Shreesh Narasimha, B. Yang, Dureseti Chidambarrao, R. Pal, Keith H. Tabakman, Seong-Dong Kim, Dominic J. Schepis, Z. Luo, Effendi Leobandung, Brian J. Greene, S.H. Ku, Paul D. Agnello, X. Wang, Q. Liang, Andrew Waite, L. Black, Scott Luning, Chun-Yung Sung, Gregory G. Freeman, Y. Wang, K. Nummy, H.V. Meer, Philip A. Fisher, Edward P. Maciejewski, X. Chen, D.-G. Park, Judson R. Holt
Publikováno v:
2007 IEEE International Electron Devices Meeting.
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010eeaa0db92e64aafa7dbb641b4db59
https://doi.org/10.1109/iedm.2007.4418927
https://doi.org/10.1109/iedm.2007.4418927