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pro vyhledávání: '"K. Niemietz"'
Akademický článek
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Publikováno v:
Journal of Crystal Growth. 372:145-156
A new experimental setup containing a GaInSn melt with a square horizontal cross section of 10×10 cm 2 and a variable melt height up to 10 cm has been developed. The melt is positioned in the center of a coil system generating a traveling magnetic f
Publikováno v:
Journal of Crystal Growth. 360:30-34
Numerical and experimental modeling of a VGF-type (VGF—vertical gradient freeze) buoyant flow under the influence of both traveling and rotating magnetic fields (TMF and RMF, respectively) is presented. Low-temperature flow experiments were carried
Publikováno v:
Journal of Crystal Growth. 333:7-15
Low-temperature model experiments and 3D, time-dependent flow simulations with relevance to the melt motion during directional solidification of multicrystalline silicon under a traveling magnetic field are presented. The influence of the inductor cu
Akademický článek
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Autor:
Karl Heinz Stegemann, Kay Dornich, A. Helbig, J.R. Niklas, K. Niemietz, Torsten Hahn, Stefan Hellwig
Publikováno v:
Solid State Phenomena. :511-516
With an innovative measurement technique termed “microwave detected photoconductivity” (MDP) it is possible to investigate defects of silicon wafers contact less and topographically by evaluating photoconductivity transients detected via microwav
Publikováno v:
Materials Science in Semiconductor Processing. 9:241-245
The visualisation of so far not detectable defects in electronic grade silicon was achieved by improving the sensitivity of a microwave detection system by several orders of magnitude. This approach to a new detection scheme opens possibilities for a
Autor:
K. Niemietz, Mathias Neumann, K. Dadzis, Lars Büttner, Markus Burger, Olf Pätzold, Jürgen Czarske, Richard Nauber
Publikováno v:
Experiments in Fluids. 54
Directional solidification is an important process for fabricating large multicrystalline silicon ingots. The complex 3D melt flows during solidification can be influenced by magnetic fields and are usually investigated in model experiments using 1D
Autor:
Olf Pätzold, Vladimir Galindo, Martin Bellmann, Ronny Lantzsch, Ilmars Grants, K. Niemietz, Gunter Gerbeth
Publikováno v:
European Physical Journal-Special Topics 220(2013)1, 243-257
This paper outlines advanced vertical Bridgman/Gradient Freeze techniques with flow control using magnetic fields developed for the growth of semiconductor crystals. Low-temperature flow modelling, as well as laboratory-scaled crystal growth under th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3e01d444c8f74ce079cb27952227301
https://www.hzdr.de/publications/Publ-18396-1
https://www.hzdr.de/publications/Publ-18396-1
Publikováno v:
Journal of Crystal Growth 318(2011), 150-155
The 16th International Conference on Crystal Growth(ICCG-16), 08.-13.08.2010, Beijing, China
The 16th International Conference on Crystal Growth(ICCG-16), 08.-13.08.2010, Beijing, China
Results on the experimental and numerical modelling of the melt flow typically observed in vertical gradient freeze (VGF) crystal growth with a travelling magnetic field (TMF) are presented. Particular attention is paid on the transition from a lamin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3608a8a6d6c742cf9248b34ce885b630
https://www.hzdr.de/publications/Publ-14533-1
https://www.hzdr.de/publications/Publ-14533-1