Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K. N. Ratnakumar"'
Publikováno v:
Applied Physics Letters. 36:425-428
Electronic defect levels in scanned electron‐beam annealed (SEBA) silicon have been measured by deep‐level transient spectroscopy. In As+‐implanted p‐n junctions, hole‐trap densities in the 1013‐cm−3 range have been achieved with the do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e856e5503c5ccb65ff5c548a00d7aaf
https://doi.org/10.1063/1.91525
https://doi.org/10.1063/1.91525
Autor:
K. N. Ratnakumar, C. Dattatreyan
Publikováno v:
IETE Journal of Research. 22:791-796
Studies on commercial X-band Gunn diodes mounted in fully-reduced height waveguide are reported. Measurements of power output and frequency of oscillation as a function of position of an adjustable short circuit plane were made on diodes biased at ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70543dde9b52e78a69548aa281ae5449
https://doi.org/10.1080/03772063.1976.11451211
https://doi.org/10.1080/03772063.1976.11451211
Publikováno v:
Applied Physics Letters. 35:463-466
A commercial scanning electron microscope, modified for high‐current operation, has been successfully used to anneal silicon layers driven amorphous by high doses of implanted arsenic. Selected‐area electron channeling patterns indicate complete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::971c82d2524f3e0050921bb3cf9b9c7c
https://doi.org/10.1063/1.91170
https://doi.org/10.1063/1.91170
Publikováno v:
Journal of Vacuum Science and Technology. 16:1843-1846
A commercial scanning electron microscope, modified for high current operation, has been successfully used to anneal arsenic implanted silicon. The measured parameters of the electron–beam are shown to fit a model for localized heating, taking into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8eeadb8604130491d1a12a292eafed4
https://doi.org/10.1116/1.570309
https://doi.org/10.1116/1.570309
Autor:
K. N. Ratnakumar, D. Kakati
Publikováno v:
Physica Status Solidi (a). 45:K13-K16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59371ff0e11769edb98a957286c8a386
https://doi.org/10.1002/pssa.2210450146
https://doi.org/10.1002/pssa.2210450146