Zobrazeno 1 - 10
of 27
pro vyhledávání: '"K. N. Christensen"'
Autor:
Eugene A. Irene, Dennis M. Maher, K. N. Christensen, Brian H. Augustine, Yunjian He, K. J. Price, Laurie E. McNeil
Publikováno v:
Journal of Applied Physics. 78:4020-4030
We report the fabrication, chemical, optical, and photoluminescence characterization of amorphous silicon‐rich oxynitride (SiOxNy:H) thin films by plasma‐enhanced chemical‐vapor deposition. The film compositions were followed by changes in the
Publikováno v:
Journal of Applied Crystallography. 24:108-110
Compounds of niobium and aluminium and of niobium, aluminium and germanium which crystallize in the A15 structure were prepared by sintering and by floating-zone methods. Single crystals of up to 1 × 1 × 1 mm were obtained for the composition Nb0.7
Autor:
Daniel J. Lichtenwalner, K. N. Christensen, O. Aucffillo, L. M. Chen, Angus I. Kingon, C. N. SobleII, R. C. Chapman, R. R. Woolcott, R. P. Adu, T. R. Barr
Publikováno v:
MRS Proceedings. 275
Ion beam sputter-deposition has been used to produce high temperature superconducting (HTSC) thin films with controlled orientation. Room temperature scanning tunneling microscopy (STM) studies of ion beam sputter-deposited Y-Ba-Cu-O thin films indic
Autor:
C. L. Wang, D. J. Diehl, C. Y. Zhao, Eugene A. Irene, Y. Z. Hu, Q. Liu, Dennis M. Maher, K. N. Christensen, D. Venable
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:744
The kinetics of the nucleation and growth of Si films on amorphous SiO2‐covered Si using rapid thermal chemical vapor deposition from SiH4 and Si2H6 (5% in He) were compared at temperatures between 600 and 800 °C and reactant gas pressures between
Autor:
Eugene A. Irene, D. Venables, Dennis M. Maher, P. P. Buaud, Y. Z. Hu, K. N. Christensen, L. Spanos
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1442
Epitaxial growth of Si on Si(100) wafers was carried out at 700 °C in an Ar microwave electron cyclotron resonance plasma chemical vapor deposition system. Both plasma exposure prior to growth and epitaxial growth were monitored by real‐time singl
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:105
The formation and evolution of Si nuclei on the Si(100) surface at 600 and 700 °C were observed in a microwave electron cyclotron resonance plasma chemical vapor deposition system, using both real‐time in situ single wavelength and spectroscopic e
Publikováno v:
Thomsen, C E, Christensen, K N & Rosenfalck, A 1989, ' Computerized monitoring of depth of anaesthesia with isoflurane ', British Journal of Anaesthesia, vol. 63, pp. 36-43 .
Changes in brain activity were studied at different depths of isoflurane anaesthesia. Ten healthy women (ASA group I) were investigated during non-critical surgery. Two channels of the EEG were stored on tape simultaneously with alveolar concentratio
Publikováno v:
European Surgical Research. 19:I-XII
Autor:
J. A. Bain, W. E. Spoerel, A. J. Dunn, Roger P. Smith, D. W. Davies, D. B. Stokke, T. Rosendal, N. J. Rasmussen, B. Juhl, P. Hole, K. N. Christensen, P. K. Andersen
Publikováno v:
Canadian Anaesthetists’ Society Journal. 25:337-340
Publikováno v:
Acta Anaesthesiologica Scandinavica. 24:90-92
The ejector flowmeter is constructed for continuous removal of excess gas from anaesthetic circuits. This instrument can be used as an air/oxygen mixing device for high-flow humidification systems in wards where compressed air is not available. Pure