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Autor:
A. A. Ershov, K. N. Chekmezov, A. P. Burovikhin, A. A. Nikitin, S. N. Abolmasov, A. A. Stashkevich, E. I. Terukov, A. V. Eskov, A. A. Semenov, A. B. Ustinov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 27, Iss 2, Pp 119-131 (2024)
Introduction. Silicon nitride is a highly promising material for fabrication of photonic integrated circuits (PICs). Plasma-enhanced chemical vapor deposition is a prospective method for large-scale industrial production of silicon nitride-based PICs
Externí odkaz:
https://doaj.org/article/93639c18cdc94154ba7fc8c3554e925f
