Zobrazeno 1 - 10
of 56
pro vyhledávání: '"K. Mutamba"'
Publikováno v:
IEEE Transactions on Electron Devices. 55:1563-1567
In this paper, we report on the bias oscillation of GaN-based Gunn diodes realized on a n+-GaN substrate. Different contact materials, ambient gases, and pulsewidths were used and compared with regard to device stability. A wide negative- differentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2862303bb69ecd06886a5cdc26b64171
https://doi.org/10.1109/ted.2008.921253
https://doi.org/10.1109/ted.2008.921253
Autor:
A. Megej, K. Beilenhoff, M. Schussler, A. Ziroff, B. Mottet, O. Yilmazoglu, K. Mutamba, C.D. Hamann, R. Baican, H.L. Hartnagel
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:3070-3076
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfc6742ea34c1119b9864c707034e65c
https://doi.org/10.1109/tmtt.2002.805148
https://doi.org/10.1109/tmtt.2002.805148
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 48:1333-1337
We present a novel bulk semiconductor pressure sensor based on an Al/sub x/Ga/sub 1-x/As/GaAs resonant tunneling diode (RTD) with a frequency output. A relaxation oscillator is obtained with the RTD biased in the negative differential resistance (NDR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cc2c1007909fee1ab53847828e8a37d
https://doi.org/10.1109/19.816157
https://doi.org/10.1109/19.816157
Autor:
Alexandru Muller, Cezary Sydlo, Dan Neculoiu, A. Kostopoulos, Dan Vasilache, George Konstantinidis, L. Bary, Robert Plana, Hans L. Hartnagel, K. Mutamba
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
This paper reports on microwave characteristics of micromachined GaN-based thin-film bulk acoustic resonator devices. The 2.2 micron active piezoelectric layer was epitaxially grown on (111)-oriented high-resistivity silicon substrate. Bulk micromach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d62e54d1ca4035eee8ee36758d0d75
https://doi.org/10.1109/mwsym.2007.380119
https://doi.org/10.1109/mwsym.2007.380119
Autor:
K. Mutamba, H.L. Hartnagel
Publikováno v:
Proceedings. International Semiconductor Conference.
This work deals with contributions related to the use of micromachining technologies in the development of RF MEMS devices. Recent device developments involving III-V compound semiconductor MEMS technology are presented in connection with RF power me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35dc47c2136d2eb4ec0aeeb5eb643cef
https://doi.org/10.1109/smicnd.2002.1105790
https://doi.org/10.1109/smicnd.2002.1105790
Publikováno v:
1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).
Recent developments in micromachining techniques based on III-V-compounds have led to the fabrication of new sensing and actuator devices for a variety of applications in control and measurement systems as well as in optical communication. This work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c638646eec1cadcd12403d707e253e56
https://doi.org/10.1109/drc.1999.806342
https://doi.org/10.1109/drc.1999.806342
Publikováno v:
1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).
We report on the development of micromachined pressure sensors utilizing uniaxial pressure effects in resonant tunneling diodes (RTDs) made from the material systems Al/sub x/Ga/sub 1-x/As/GaAs and InAs/AlSb/GaSb. High stress sensitivities with K-Fac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a887f26c2b9dfd8c3575f577e4b4367d
https://doi.org/10.1109/drc.1999.806325
https://doi.org/10.1109/drc.1999.806325
Autor:
J. Pfeiffer, S. Herbst, J. Peerlings, Martin Strassner, R. Riemenschneider, V.N. Kumar, Hans L. Hartnagel, Volker Scheuer, Peter Meissner, K. Mutamba
Publikováno v:
24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).
We have fabricated a two-chip wavelength selective InGaAs-InP Fabry-Perot PIN receiver for dense wavelength division multiplex systems. The receiver can be combined with micromachined actuators for wavelength tuning. We have presented an InGaAs-InP w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a9749999f880321a24e3c41b608d4e
https://doi.org/10.1109/ecoc.1998.732438
https://doi.org/10.1109/ecoc.1998.732438
Publikováno v:
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368).
The subband of Al/sub x/In/sub 1-x/Sb/InSb quantum-well structure under the effect of interdiffusion were calculated. The model use the 14-band calculation and the effective Hamiltonian approach. The results show that the interband transition energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f73df3dd5e9de0822b01dd3a820a5d8
https://doi.org/10.1109/hkedm.1998.740179
https://doi.org/10.1109/hkedm.1998.740179
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