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Autor:
Martin Popp, D. Manger, U. Scheler, K. Mummler, H. Seidl, S. Tegen, B. Goebel, M. Sesterhenn, Till Schlösser, Peter Moll, J. Lutzen, Stefan Slesazeck
Publikováno v:
Digest. International Electron Devices Meeting.
A high performance surrounding gate transistor (SGT) enabling sufficient static and dynamic retention time of future DRAM cells is presented. For the first time, we demonstrate a fully depleted SGT, that shows no reduction of the retention time due t