Zobrazeno 1 - 10
of 24
pro vyhledávání: '"K. Medjnoun"'
Publikováno v:
Materials Science in Semiconductor Processing. 83:224-230
Copper indium disulfide (CuInS2) nanoparticles with sizes 20 ± 5 nm were synthesized by solvothermal techniques. Subsequently these were deposited for the first time on glass via a close-spaced vapor transport technique (CSVT) using iodine as transp
Publikováno v:
Thin Solid Films. 660:499-505
This paper reports the prediction of optimal conditions to grow good quality crystalline thin films using the Close-Spaced Vapor Transport process. A new configuration of the horizontal reactor is used and presented. A thermodynamic model is proposed
Publikováno v:
Materials Research Bulletin. 99:182-188
In this study, nanoparticles of Cu2SnS3 (CTS) have been synthesized by a simple one-step hydrothermal route without annealing. Metal chlorides and sodium sulphide precursors were dissolved in green solvent (water) and maintained at 230 °C for 24 h i
Akademický článek
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Publikováno v:
Journal of Semiconductors. 42:072701
In this work, a Cu2ZnSnS4 (CZTS) ingot is grown via a melting method, then cooled; the resulting molten stoichiometric mixture is sealed off in a quartz ampoule under vacuum. The CZTS powder chemical composition analyses are determined using energy d
Publikováno v:
Ceramics International. 42:16212-16219
Nanostructured aluminum-doped ZnO (ZnO:Al) thin films of various thicknesses were deposited on flexible Poly-Ethylene Naphthalate (PEN) substrates by RF-magnetron sputtering without intentionally heating them to fabricate Transparent Conductive Oxide
Publikováno v:
Journal of Alloys and Compounds. 685:699-704
High quality Cu2ZnSnS4 (CZTS) ingots obtained by cooling a molten stoichiometric mixture have been deposited as thin films on soda-lime glass by Close Spaced Vapor Transport (CSVT). Iodine pressure is one of the important parameters for the CSVT proc
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Publikováno v:
2016 International Renewable and Sustainable Energy Conference (IRSEC).
Conduction mechanism was investigated from DC and AC conductivity measurements in the thin film ternary semiconductor Cu 2 SnS 3 compound. The electrical properties of this material were analyzed by impedance spectrometry (IS) in the frequency range
Publikováno v:
2016 International Renewable and Sustainable Energy Conference (IRSEC).
The present study reports on the structural, morphological, optical and electrical properties of Zn 1−x V x O (0 ≥ x ≥ 0.30) thin films. These films of ∼ 200 to 240 nm thickness with low and high vanadium loading, were grown by rf-magnetron s