Zobrazeno 1 - 10
of 13
pro vyhledávání: '"K. Madiomanana"'
Autor:
Olivia Mauguin, Mounib Bahri, A. Castellano, Ludovic Largeau, Gilles Patriarche, K. Madiomanana, Jean-Baptiste Rodriguez, Eric Tournié, Laurent Cerutti
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2015, 413, pp.17-24. ⟨10.1016/j.jcrysgro.2014.12.004⟩
Journal of Crystal Growth, Elsevier, 2015, 413, pp.17-24. ⟨10.1016/j.jcrysgro.2014.12.004⟩
We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ process is composed of cycles of HF dip and O 2 plasma treatments. Ellipsometry and atomic force
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06325625487d327b316edd78c41ab806
https://doi.org/10.1016/j.jcrysgro.2014.12.004
https://doi.org/10.1016/j.jcrysgro.2014.12.004
Autor:
Eric Tournié, Laurent Cerutti, Gilles Patriarche, K. Madiomanana, Jean-Baptiste Rodriguez, Ludovic Largeau
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2017, 477, pp.65-71. ⟨10.1016/j.jcrysgro.2017.04.003⟩
Journal of Crystal Growth, Elsevier, 2017, 477, pp.65-71. ⟨10.1016/j.jcrysgro.2017.04.003⟩
We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleation layer. In particular, we investigate the influence of the AlSb layer thickness when this nucleation layer is grown at low temperature (400 °C). X-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dde3117afa1a74f44fe58b23044cea63
https://hal.archives-ouvertes.fr/hal-01755268
https://hal.archives-ouvertes.fr/hal-01755268
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2016, 439, pp.33-39. ⟨10.1016/j.jcrysgro.2016.01.005⟩
Journal of Crystal Growth, Elsevier, 2016, 439, pp.33-39. ⟨10.1016/j.jcrysgro.2016.01.005⟩
We report on the molecular beam epitaxy and characterization by X-ray diffraction techniques of GaSb layers grown on silicon substrates. AlSb and Al nucleation layers were used with different thicknesses and growth temperatures. Reciprocal space maps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88377b9204762028823fb2dee8d46fe0
https://hal.archives-ouvertes.fr/hal-01626675
https://hal.archives-ouvertes.fr/hal-01626675
Publikováno v:
Asia Communications and Photonics Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3389c383df5f60f2c52e2490e96fada
https://doi.org/10.1364/acp.2012.as1h.5
https://doi.org/10.1364/acp.2012.as1h.5
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 99 (13), pp.133102. ⟨10.1063/1.3641424⟩
Applied Physics Letters, American Institute of Physics, 2011, 99 (13), pp.133102. ⟨10.1063/1.3641424⟩
The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d99fcaa714f0f8d4993ca7963227811a
https://doi.org/10.1063/1.3641424
https://doi.org/10.1063/1.3641424
Autor:
Mike Sprinkle, Yike Hu, Claire Berger, Nerasoa K. Madiomanana, Walt A. de Heer, Ming Ruan, Xiaosong Wu, John Hankinson
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2009, 95 (22), pp.223108. ⟨10.1063/1.3266524⟩
Applied Physics Letters, American Institute of Physics, 2009, 95 (22), pp.223108. ⟨10.1063/1.3266524⟩
The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c45c01ed4f99b0ec8e44145b7ad2af79
https://doi.org/10.1063/1.3266524
https://doi.org/10.1063/1.3266524
Akademický článek
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Publikováno v:
Scopus-Elsevier
GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 µm lasers and their direct integration onto Si substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62fc573029c941bbb67c624d79721d7b
http://www.scopus.com/inward/record.url?eid=2-s2.0-84890464326&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84890464326&partnerID=MN8TOARS
Akademický článek
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Akademický článek
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