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pro vyhledávání: '"K. M. M. Habib"'
Publikováno v:
NANOARCH
Graphene nanoribbon crossbars exhibit negative differential resistance. This nonlinear current-voltage response can be exploited in a nanomesh geometry for high-density logic or memory. A 2xN crossbar array can store 3N states. Proof-of-principle of
Autor:
Pritish Narayanan, Mostafizur Rahman, Csaba Andras Moritz, Santosh Khasanvis, Roger K. Lake, K. M. M. Habib
Publikováno v:
Scopus-Elsevier
NANOARCH
NANOARCH
Graphene is an emerging nano-material that has garnered immense research interest due to its exotic electrical properties. It is believed to be a potential candidate for post-Si nanoelectronics due to high carrier mobility and extreme scalability. Re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fad14ed35861524ce6cd12a81af3ecf
http://www.scopus.com/inward/record.url?eid=2-s2.0-84874772908&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84874772908&partnerID=MN8TOARS