Zobrazeno 1 - 10
of 14
pro vyhledávání: '"K. M. Barfoot"'
Publikováno v:
Journal of Applied Physics. 69:2183-2189
Simple modifications to the processing of the capping layer in structures used for the preparation of silicon‐on‐insulator films by liquid phase recrystallization using the dual electron beam method are shown to reduce nonuniformities in the recr
Publikováno v:
Journal of Applied Physics. 63:1032-1036
He‐implanted samples of LiNbO3 have been analyzed by 24‐MeV 28Si elastic recoil detection. For 50‐keV He implants, the Li and H profiles show a depletion of Li from the sample near‐surface region which coincides with a gain of H. The Li loss
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :143-146
The special properties of molecular dynamics multiple interaction simulations make it possible to analyse in detail the spatio-temporal history of every atom within a fixed region of a target during ion irradiation. When the positions of each particl
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 191:204-210
An external beam from the Queen's University microprobe has been used to analyze hydronium-potassium ion exchange in polycrystalline potassium β - alumina and to investigate the composition and possible growth mechanisms of inclusions in ceramic pie
Publikováno v:
Materials Letters. 4:93-98
The use of multiply-scanned electron beam irradiation of Ti films on LiNbO 3 substrates, as a means of Ti indiffusion, has been examined for the first time. Rutherford backscattering and electron microprobe analysis of the transiently annealed materi
Autor:
D. J. Godfrey, K. M. Barfoot, Richard A. McMahon, David Smith, T. B. Peters, G. F. Hopper, Haroon Ahmed
Publikováno v:
Journal of Applied Physics. 63:1438-1441
Silicon‐on‐insulator layers have been produced under conditions which are compatible with three‐dimensional device integration. The layers were formed by zone melting recrystallization of two types of seeded silicon films in a dual electron bea
Autor:
B L Weiss, K M Barfoot
Publikováno v:
Journal of Physics D: Applied Physics. 17:L47-L52
The depths of the peaks of damage distributions produced by implantation of 50-1100 keV 4He+ ions into Y-cut single-crystal LiNbO3 have been determined using proton channelling. These values are about 20% lower than those deduced from optical measure
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 14:179-185
Energy loss measurements have been performed with 301 and 610 keV He-ions and 620 keV H-ions in carbon foils for a thickness range of 100–1000 A. The relative foil thicknesses were calibrated by Rutherford backscattering (RBS) with 1.5 MeV H-ions.
Publikováno v:
Radiation Effects. 98:249-257
In order to gain a better understanding of the behaviour of optical waveguides created by the implantation of helium ions into Y-cut LiNbO3, 50 keV He ion-induced lattice disorder and refractive index changes have been studied with the aid of RBS cha
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 201:465-471
The 2H(d, n)3He, 7Li(p, n)7Be, 9 Be(α, n) 12 C and 13 C(α, n) 16 O reactions are compared for suitability as a neutron source for bulk multielement analysis by inelastic neutron scattering. The 13C(α, n)16O reaction at Eα = 3.4 MeV is found to be